IRFB4410ZPBF International Rectifier, IRFB4410ZPBF Datasheet - Page 3

MOSFET N-CH 100V 97A TO-220AB

IRFB4410ZPBF

Manufacturer Part Number
IRFB4410ZPBF
Description
MOSFET N-CH 100V 97A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRFB4410ZPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
9 mOhm @ 58A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
97A
Vgs(th) (max) @ Id
4V @ 150µA
Gate Charge (qg) @ Vgs
120nC @ 10V
Input Capacitance (ciss) @ Vds
4820pF @ 50V
Power - Max
230W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
97 A
Power Dissipation
230 W
Mounting Style
Through Hole
Gate Charge Qg
83 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
100000
10000
1000
1000
1000
100
100
100
0.1
10
10
1
1
0.1
Fig 3. Typical Transfer Characteristics
1
2
Fig 1. Typical Output Characteristics
TOP
BOTTOM
V DS = 50V
≤60µs PULSE WIDTH
T J = 175°C
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
3
C rss
C iss
C oss
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
1
4
f = 1 MHZ
≤ 60µs PULSE WIDTH
Tj = 25°C
10
4.5V
5
T J = 25°C
10
6
100
100
7
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
Fig 4. Normalized On-Resistance vs. Temperature
1000
12.0
10.0
100
2.5
2.0
1.5
1.0
0.5
8.0
6.0
4.0
2.0
0.0
10
1
0.1
-60 -40 -20 0 20 40 60 80 100120140160180
0
Fig 2. Typical Output Characteristics
TOP
BOTTOM
I D = 58A
I D = 58A
V GS = 10V
V DS , Drain-to-Source Voltage (V)
T J , Junction Temperature (°C)
20
Q G , Total Gate Charge (nC)
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
V DS = 80V
V DS = 40V
V DS = 20V
1
≤ 60µs PULSE WIDTH
Tj = 175°C
40
60
4.5V
10
80
100
100
3

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