IRFB4410ZPBF International Rectifier, IRFB4410ZPBF Datasheet - Page 4

• Manufacturer Part Number: IRFB4410ZPBF
• Description: MOSFET N-CH 100V 97A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFB4410ZPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9 mOhm @ 58A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 97A
• Vgs(th) (max) @ Id: 4V @ 150µA
• Gate Charge (qg) @ Vgs: 120nC @ 10V
• Input Capacitance (ciss) @ Vds: 4820pF @ 50V
• Power - Max: 230W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 97 A
• Power Dissipation: 230 W
• Mounting Style: Through Hole
• Gate Charge Qg: 83 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

4
1000
100
100
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.1
10
80
60
40
20
0
1
Fig 11. Typical C
-10 0 10 20 30 40 50 60 70 80 90 100
0.0
25
Fig 7. Typical Source-Drain Diode
Fig 9. Maximum Drain Current vs.
T J = 175°C
V DS, Drain-to-Source Voltage (V)
V SD , Source-to-Drain Voltage (V)
0.5
50
T C , Case Temperature (°C)
Case Temperature
Forward Voltage
T J = 25°C
1.0
75
OSS
Stored Energy
100
1.5
V GS = 0V
125
2.0
150
2.5
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
1000
1000
100
125
120
115
110
105
100
900
800
700
600
500
400
300
200
100
Fig 10. Drain-to-Source Breakdown Voltage
10
95
90
1
0
Fig 8. Maximum Safe Operating Area
-60 -40 -20 0 20 40 60 80 100120140160180
25
0
Tc = 25°C
Tj = 175°C
Single Pulse
Id = 5mA
Starting T J , Junction Temperature (°C)
V DS , Drain-to-Source Voltage (V)
50
T J , Temperature ( °C )
OPERATION IN THIS AREA
LIMITED BY R DS (on)
75
1
10msec
DC
100
1msec
TOP
BOTTOM 58A
125
10
100µsec
150
I D
6.4A
9.4A
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100
175