IRFB4410ZPBF International Rectifier, IRFB4410ZPBF Datasheet - Page 6

• Manufacturer Part Number: IRFB4410ZPBF
• Description: MOSFET N-CH 100V 97A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFB4410ZPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9 mOhm @ 58A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 97A
• Vgs(th) (max) @ Id: 4V @ 150µA
• Gate Charge (qg) @ Vgs: 120nC @ 10V
• Input Capacitance (ciss) @ Vds: 4820pF @ 50V
• Power - Max: 230W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 97 A
• Power Dissipation: 230 W
• Mounting Style: Through Hole
• Gate Charge Qg: 83 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

6
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
20
15
10
Fig 16. Threshold Voltage vs. Temperature
5
0
100
-75 -50 -25 0
I D = 150µA
I D = 250µA
I D = 1.0mA
I D = 1.0A
I F = 58A
V
T
T J = 125°C ----------
R
J
= 25°C _____
= 85V
200
T J , Temperature ( °C )
300
25 50 75 100 125 150 175 200
di f /dt (A/µs)
400
500
450
400
350
300
250
200
150
100
50
0
600
100
I
V
T J = 25°C _____
T J = 125°C
----------
F
R
= 58A
= 85V
700
f
200
300
di f /dt (A/µs)
400
500
400
350
300
250
200
150
100
600
20
15
10
50
5
0
0
100
100
f
I
V
T J = 25°C _____
T J = 125°C ----------
700
I
V
T J = 25°C _____
T J = 125°C ----------
F
F
R
R
= 39A
= 39A
= 85V
= 85V
200
200
300
300
di f /dt (A/µs)
di f /dt (A/µs)
400
400
500
500
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600
600
f
700
700
f