IRFB4410ZPBF International Rectifier, IRFB4410ZPBF Datasheet - Page 7

• Manufacturer Part Number: IRFB4410ZPBF
• Description: MOSFET N-CH 100V 97A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFB4410ZPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9 mOhm @ 58A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 97A
• Vgs(th) (max) @ Id: 4V @ 150µA
• Gate Charge (qg) @ Vgs: 120nC @ 10V
• Input Capacitance (ciss) @ Vds: 4820pF @ 50V
• Power - Max: 230W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 97 A
• Power Dissipation: 230 W
• Mounting Style: Through Hole
• Gate Charge Qg: 83 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Fig 22a. Unclamped Inductive Test Circuit
Fig 23a. Switching Time Test Circuit
Fig 24a. Gate Charge Test Circuit

‚
+
-
R G
20V
20K
V DS
Second Pulse Width < 1µs
1K
D.U.T
Duty Factor < 0.1%
V
t p
GS
Fig 21.
I AS
D.U.T
V
ƒ
DS
+
-
0.01 Ω
•
•
•
•
L
S
SD
DUT
•
•
•
D.U.T
15V
L
L
D
-
V
DRIVER
„
G
HEXFET
DD
+
+
-
-
+
V DD
A
VCC
®
Power MOSFETs
+
-
Re-Applied
Voltage
Reverse
Recovery
Current
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
Fig 22b. Unclamped Inductive Waveforms
90%
Fig 23b. Switching Time Waveforms
I
V
P.W.
10%
AS
SD
DS
V
Id
DS
Fig 24b. Gate Charge Waveform
Waveform
GS
Waveform
Vgs
for N-Channel
Ripple ≤ 5%
Body Diode
Period
Body Diode Forward
t
d(on)
Diode Recovery
Current
Qgodr
t p
dv/dt
Forward Drop
t
r
di/dt
D =
Qgd
Period
t
V
P.W.
d(off)
(BR)DSS
Qgs2
t
V
V
I
f
Vgs(th)
SD
GS
DD
Vds
Qgs1
=10V
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