IRFP3306PBF International Rectifier, IRFP3306PBF Datasheet
IRFP3306PBF
Specifications of IRFP3306PBF
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IRFP3306PBF Summary of contents
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... AR Thermal Resistance Symbol R Junction-to-Case k θJC R Case-to-Sink, Flat Greased Surface θCS R Junction-to-Ambient jk θJA www.irf.com G Gate Parameter @ 10V (Silicon Limited 10V (Silicon Limited 10V (Wire Bond Limited) GS Parameter IRFP3306PbF HEXFET Power MOSFET V D DSS R typ. DS(on) max. I (Silicon Limited (Package Limited TO-247AC G D Drain Max ...
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Static @ T = 25°C (unless otherwise specified) J Symbol Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ΔV /ΔT Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS I ...
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VGS TOP 15V 10V 8.0V 6.0V 5.5V 5.0V 4.8V BOTTOM 4.5V 100 4.5V ≤ 60μs PULSE WIDTH Tj = 25° Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 100 ...
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175° 25° 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1 Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 180 160 Limited ...
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D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 ( THERMAL RESPONSE ) 0.0001 1E-006 Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case 100 Duty Cycle = Single Pulse 10 Allowed avalanche Current vs avalanche ...
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Temperature ( °C ) Fig 16. Threshold Voltage Vs. Temperature 100 200 300 400 500 600 700 800 ...
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D.U.T + ƒ ‚ - • • • SD • Fig 21 D.U 20V V GS 0.01 Ω Fig 22a. Unclamped Inductive Test Circuit ...
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EXAMPLE: THIS IS AN IRFPE30 WIT EMBLY LOT CODE 5657 AS S EMBLED ON WW 35, 2001 EMBLY LINE "H" Note: "P" in ass embly line pos ition indicates "Lead-Free" TO-247AC packages ...