MOSFET N-CH 60V 120A TO-247AC

IRFP3306PBF

Manufacturer Part NumberIRFP3306PBF
DescriptionMOSFET N-CH 60V 120A TO-247AC
ManufacturerInternational Rectifier
SeriesHEXFET®
IRFP3306PBF datasheet
 


Specifications of IRFP3306PBF

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs4.2 mOhm @ 75A, 10VDrain To Source Voltage (vdss)60V
Current - Continuous Drain (id) @ 25° C120AVgs(th) (max) @ Id4V @ 150µA
Gate Charge (qg) @ Vgs120nC @ 10VInput Capacitance (ciss) @ Vds4520pF @ 50V
Power - Max220WMounting TypeThrough Hole
Package / CaseTO-247-3 (Straight Leads), TO-247ACTransistor PolarityN Channel
Continuous Drain Current Id120ADrain Source Voltage Vds60V
On Resistance Rds(on)3.3mohmRds(on) Test Voltage Vgs20V
Threshold Voltage Vgs Typ4VRohs CompliantYes
Drain-source Breakdown Voltage60 VGate-source Breakdown Voltage20 V
Continuous Drain Current160 APower Dissipation220 W
Mounting StyleThrough HoleGate Charge Qg85 nC
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
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Applications
High Efficiency Synchronous Rectification in SMPS
l
Uninterruptible Power Supply
l
High Speed Power Switching
l
Hard Switched and High Frequency Circuits
l
Benefits
Improved Gate, Avalanche and Dynamic dV/dt
l
Ruggedness
Fully Characterized Capacitance and Avalanche
l
SOA
Enhanced body diode dV/dt and dI/dt Capability
l
Lead-Free
l
Absolute Maximum Ratings
Symbol
I
@ T
= 25°C
Continuous Drain Current, V
D
C
I
@ T
= 100°C
Continuous Drain Current, V
D
C
I
@ T
= 25°C
Continuous Drain Current, V
D
C
I
Pulsed Drain Current d
DM
P
@T
= 25°C
Maximum Power Dissipation
D
C
Linear Derating Factor
V
Gate-to-Source Voltage
GS
Peak Diode Recovery f
dv/dt
T
Operating Junction and
J
T
Storage Temperature Range
STG
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
Single Pulse Avalanche Energy e
E
AS (Thermally limited)
Avalanche Current d
I
AR
Repetitive Avalanche Energy g
E
AR
Thermal Resistance
Symbol
R
Junction-to-Case k
θJC
R
Case-to-Sink, Flat Greased Surface
θCS
R
Junction-to-Ambient jk
θJA
www.irf.com
G
Gate
Parameter
@ 10V (Silicon Limited)
GS
@ 10V (Silicon Limited)
GS
@ 10V (Wire Bond Limited)
GS
Parameter
IRFP3306PbF
HEXFET Power MOSFET
V
D
DSS
R
typ.
DS(on)
max.
I
(Silicon Limited)
D
I
D
(Package Limited)
S
D
S
D
G
TO-247AC
G
D
Drain
Max.
160c
110
120
620
220
1.5
± 20
14
-55 to + 175
300
10lbxin (1.1Nxm)
184
See Fig. 14, 15, 22a, 22b,
Typ.
Max.
–––
0.67
0.24
–––
–––
40
60V
3.3m :
4.2m :
160A c
120A
S
Source
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
1
3/3/08

IRFP3306PBF Summary of contents

  • Page 1

    ... AR Thermal Resistance Symbol R Junction-to-Case k θJC R Case-to-Sink, Flat Greased Surface θCS R Junction-to-Ambient jk θJA www.irf.com G Gate Parameter @ 10V (Silicon Limited 10V (Silicon Limited 10V (Wire Bond Limited) GS Parameter IRFP3306PbF HEXFET Power MOSFET V D DSS R typ. DS(on) max. I (Silicon Limited (Package Limited TO-247AC G D Drain Max ...

  • Page 2

    Static @ T = 25°C (unless otherwise specified) J Symbol Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ΔV /ΔT Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS I ...

  • Page 3

    VGS TOP 15V 10V 8.0V 6.0V 5.5V 5.0V 4.8V BOTTOM 4.5V 100 4.5V ≤ 60μs PULSE WIDTH Tj = 25° Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 100 ...

  • Page 4

    175° 25° 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1 Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 180 160 Limited ...

  • Page 5

    D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 ( THERMAL RESPONSE ) 0.0001 1E-006 Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case 100 Duty Cycle = Single Pulse 10 Allowed avalanche Current vs avalanche ...

  • Page 6

    Temperature ( °C ) Fig 16. Threshold Voltage Vs. Temperature 100 200 300 400 500 600 700 800 ...

  • Page 7

    D.U.T + ƒ ‚ -  • • • SD • Fig 21 D.U 20V V GS 0.01 Ω Fig 22a. Unclamped Inductive Test Circuit ...

  • Page 8

    EXAMPLE: THIS IS AN IRFPE30 WIT EMBLY LOT CODE 5657 AS S EMBLED ON WW 35, 2001 EMBLY LINE "H" Note: "P" in ass embly line pos ition indicates "Lead-Free" TO-247AC packages ...