IRFP3306PBF International Rectifier, IRFP3306PBF Datasheet - Page 4

• Manufacturer Part Number: IRFP3306PBF
• Description: MOSFET N-CH 60V 120A TO-247AC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFP3306PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.2 mOhm @ 75A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 4V @ 150µA
• Gate Charge (qg) @ Vgs: 120nC @ 10V
• Input Capacitance (ciss) @ Vds: 4520pF @ 50V
• Power - Max: 220W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 120A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 3.3mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 160 A
• Power Dissipation: 220 W
• Mounting Style: Through Hole
• Gate Charge Qg: 85 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

4
1000
180
160
140
120
100
100
1.5
1.0
0.5
0.0
0.1
80
60
40
20
10
1
Fig 11. Typical C
0
0.2
0
25
Fig 7. Typical Source-Drain Diode
Fig 9. Maximum Drain Current vs.
T J = 175°C
0.4
V SD , Source-to-Drain Voltage (V)
10
50
V DS, Drain-to-Source Voltage (V)
0.6
T C , Case Temperature (°C)
Case Temperature
Forward Voltage
0.8
20
75
T J = 25°C
OSS
1.0
100
30
Limited By Package
1.2
Stored Energy
1.4
125
40
V GS = 0V
1.6
150
50
1.8
2.0
175
60
Fig 12. Maximum Avalanche Energy Vs. DrainCurrent
10000
1000
100
800
600
400
200
0.1
10
80
70
60
50
1
0
Fig 10. Drain-to-Source Breakdown Voltage
Fig 8. Maximum Safe Operating Area
0.1
-60 -40 -20 0
25
I D = 5mA
Tc = 25°C
Tj = 175°C
Single Pulse
Starting T J , Junction Temperature (°C)
V DS , Drain-toSource Voltage (V)
50
T J , Junction Temperature (°C)
OPERATION IN THIS AREA
LIMITED BY R DS (on)
1
20 40 60 80 100 120 140 160 180
75
100
1msec
10msec
10
TOP
BOTTOM
125
DC
100μsec
150
13A
96A
18A
I D
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100
175