IRFP3306PBF International Rectifier, IRFP3306PBF Datasheet - Page 6

• Manufacturer Part Number: IRFP3306PBF
• Description: MOSFET N-CH 60V 120A TO-247AC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFP3306PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.2 mOhm @ 75A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 4V @ 150µA
• Gate Charge (qg) @ Vgs: 120nC @ 10V
• Input Capacitance (ciss) @ Vds: 4520pF @ 50V
• Power - Max: 220W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 120A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 3.3mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 160 A
• Power Dissipation: 220 W
• Mounting Style: Through Hole
• Gate Charge Qg: 85 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
Fig 16. Threshold Voltage Vs. Temperature
16
12
8
4
0
100 200 300 400 500 600 700 800 900 1000
-75 -50 -25
T J , Temperature ( °C )
0
di f / dt - (A / μs)
25
50
I F = 45A
V R = 51V
T J = 125°C
T J = 25°C
75
I D = 1.0A
I D = 1.0mA
I D = 250μA
ID = 150μA
100 125 150 175
350
300
250
200
150
100
50
0
100 200 300 400 500 600 700 800 900 1000
f
di f / dt - (A / μs)
I F = 45A
V R = 51V
T J = 125°C
T J = 25°C
350
300
250
200
150
100
16
12
50
8
4
0
0
100 200 300 400 500 600 700 800 900 1000
100 200 300 400 500 600 700 800 900 1000
f
di f / dt - (A / μs)
di f / dt - (A / μs)
I F = 30A
V R = 51V
T J = 125°C
T J = 25°C
I F = 30A
V R = 51V
T J = 125°C
T J = 25°C
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