IRFP3306PBF International Rectifier, IRFP3306PBF Datasheet - Page 7

MOSFET N-CH 60V 120A TO-247AC

IRFP3306PBF

Manufacturer Part Number
IRFP3306PBF
Description
MOSFET N-CH 60V 120A TO-247AC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRFP3306PBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
4.2 mOhm @ 75A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
120A
Vgs(th) (max) @ Id
4V @ 150µA
Gate Charge (qg) @ Vgs
120nC @ 10V
Input Capacitance (ciss) @ Vds
4520pF @ 50V
Power - Max
220W
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Transistor Polarity
N Channel
Continuous Drain Current Id
120A
Drain Source Voltage Vds
60V
On Resistance Rds(on)
3.3mohm
Rds(on) Test Voltage Vgs
20V
Threshold Voltage Vgs Typ
4V
Rohs Compliant
Yes
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
160 A
Power Dissipation
220 W
Mounting Style
Through Hole
Gate Charge Qg
85 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Fig 22a. Unclamped Inductive Test Circuit
Fig 23a. Switching Time Test Circuit
Fig 24a. Gate Charge Test Circuit

+
-
12V
V
GS
R G
20V
V
Same Type as D.U.T.
V DS
GS
D.U.T
Current Regulator
.2μF
Duty Factor < 0.1%
Pulse Width < 1μs
V
t p
GS
50KΩ
3mA
Fig 21.
Current Sampling Resistors
I AS
ƒ
D.U.T
.3μF
V
+
-
DS
0.01 Ω
L
I
G
SD
D.U.T.
I
D.U.T
D
L
15V
D
-
+
-
V
V
G
HEXFET
DRIVER
DD
DS
+
-
+
-
+
V DD
A
®
Power MOSFETs
+
-
Re-Applied
Voltage
Reverse
Recovery
Current
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
90%
Fig 22b. Unclamped Inductive Waveforms
V
10%
V
DS
Fig 23b. Switching Time Waveforms
P.W.
SD
GS
DS
I
Fig 24b. Gate Charge Waveform
AS
Vgs(th)
Waveform
Qgs1 Qgs2
Waveform
Vds
for N-Channel
Ripple ≤ 5%
Body Diode
t
d(on)
Period
Body Diode Forward
Diode Recovery
Current
t
r
Qgd
dv/dt
Forward Drop
t p
di/dt
Qgodr
D =
t
d(off)
Period
P.W.
V
t
(BR)DSS
f
V
V
I
SD
GS
DD
Vgs
=10V
Id
7

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