IXTQ130N10T IXYS, IXTQ130N10T Datasheet

MOSFET N-CH 100V 130A TO-3P

IXTQ130N10T

Manufacturer Part Number
IXTQ130N10T
Description
MOSFET N-CH 100V 130A TO-3P
Manufacturer
IXYS
Series
TrenchMV™r
Datasheet

Specifications of IXTQ130N10T

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
9.1 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
130A
Vgs(th) (max) @ Id
4.5V @ 250µA
Gate Charge (qg) @ Vgs
104nC @ 10V
Input Capacitance (ciss) @ Vds
5080pF @ 25V
Power - Max
360W
Mounting Type
Through Hole
Package / Case
TO-3P
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0085 Ohms
Drain-source Breakdown Voltage
100 V
Continuous Drain Current
130 A
Power Dissipation
360 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
100
Id(cont), Tc=25°c, (a)
130
Rds(on), Max, Tj=25°c, (?)
0.0091
Ciss, Typ, (pf)
5080
Qg, Typ, (nc)
104
Trr, Typ, (ns)
67
Trr, Max, (ns)
-
Pd, (w)
360
Rthjc, Max, (k/w)
0.42
Package Style
TO-3P
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
TrenchMV
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
I
I
I
I
E
P
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
© 2008 IXYS CORPORATION, All rights reserved
DM
A
D25
LRMS
GSS
DSS
J
JM
stg
L
DSS
DGR
GSM
AS
D
GS(th)
DS(on)
d
J
DSS
= 25°C unless otherwise specified)
Test Conditions
T
T
Transient
T
Lead Current Limit, RMS
T
T
T
T
1.6mm (0.062in.) from case for 10s
Plastic body for 10 seconds
Mounting torque (TO-247)(TO-3P)
TO-247
TO-3P
V
V
V
V
V
V
Test Conditions
C
C
C
C
C
J
J
GS
DS
GS
DS
GS
GS
= 25°C to 175°C
= 25°C to 175°C, R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
= 0V, I
= V
= ± 20V, V
= V
= 0V
= 10V, I
GS
DSS
TM
, I
D
D
D
= 250μA
= 250μA
= 25A, Notes 1, 2
DS
= 0V
GS
= 1MΩ
T
J
= 150°C
JM
IXTH130N10T
IXTQ130N10T
-55 ... +175
-55 ... +175
100
2.5
Min.
Maximum Ratings
Characteristic Values
1.13 / 10
± 20
175
300
260
100
100
130
300
500
360
6.0
5.5
Typ.
75
65
±200 nA
250
Max.
Nm/lb.in.
9.1 mΩ
4.5
5
mJ
μA
μA
°C
°C
°C
°C
°C
W
V
V
V
A
A
A
A
V
V
g
g
Features
Advantages
Applications
V
I
R
TO-247 (IXTH)
TO-3P (IXTQ)
G = Gate
S = Source
D25
Ultra-low On Resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
175 °C Operating Temperature
Easy to mount
Space savings
High power density
Automotive
- Motor Drives
- High Side Switch
- 12V Battery
- ABS Systems
DC/DC Converters and Off-line UPS
Primary- Side Switch
High Current Switching
Applications
DS(on)
DSS
G
G
D
D
S
S
= 100V
= 130A
≤ ≤ ≤ ≤ ≤
D
TAB = Drain
9.1mΩ Ω Ω Ω Ω
(TAB)
= Drain
(TAB)
DS99708A(07/08)

Related parts for IXTQ130N10T

IXTQ130N10T Summary of contents

Page 1

... GSS DSS DS DSS 10V 25A, Notes 1, 2 DS(on © 2008 IXYS CORPORATION, All rights reserved IXTH130N10T IXTQ130N10T Maximum Ratings 100 = 1MΩ 100 GS ± 20 130 75 300 JM 65 500 360 -55 ... +175 175 -55 ... +175 300 260 1. 6.0 5.5 Characteristic Values Min. Typ. ...

Page 2

... DSS D 29 0.25 Characteristic Values Min. Typ 4.7 160 Kelvin test contact DS(on) 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTH130N10T IXTQ130N10T TO-247 (IXTH) Outline Max Terminals Gate nC Dim. Millimeter Min. Max 4 2 2.2 0.42 °C/W ...

Page 3

... Fig Normalized to I DS(on) vs. Junction Temperature 2.8 2 10V GS 2.4 2 130A 2.0 D 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -50 - Degrees Centigrade J Fig. 6. Drain Current vs. Case Temperature -50 - Degrees Centigrade C IXTH130N10T IXTQ130N10T 65A Value 65A D 100 125 150 175 100 125 150 175 ...

Page 4

... C oss 0.10 C rss 0. Fig. 8. Transconductance 40º 25º 150º 100 120 I - Amperes D Fig. 10. Gate Charge 50V 25A 10mA NanoCoulombs G Fig. 12. Maximum Transient Thermal Impedance 0.0001 0.001 0.01 0.1 Pulse Width - Seconds IXTH130N10T IXTQ130N10T 140 160 180 200 220 100 110 1 10 ...

Page 5

... Switching Times vs. Junction Temperature d(off Ω 10V 50V 25A 50A Degrees Centigrade J Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 25A < d(on 125º 10V 50V 25A 50A Ohms G IXTH130N10T IXTQ130N10T 105 115 125 170 < 50A D 150 130 110 IXYS REF: T_130N10T(V3)07-29-08-A ...

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