IXTP16N50P IXYS, IXTP16N50P Datasheet
Home Discrete Semiconductor Products MOSFETs, GaNFETs - Single IXTP16N50P
Manufacturer Part Number
IXTP16N50P
Description
MOSFET N-CH 500V 16A TO-220
Specifications of IXTP16N50P
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
400 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
16A
Vgs(th) (max) @ Id
5.5V @ 250µA
Gate Charge (qg) @ Vgs
43nC @ 10V
Input Capacitance (ciss) @ Vds
2250pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-220
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.4 Ohms
Forward Transconductance Gfs (max / Min)
16 s
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
16 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
16
Rds(on), Max, Tj=25°c, (?)
0.4
Ciss, Typ, (pf)
2480
Qg, Typ, (nc)
43
Trr, Typ, (ns)
400
Pd, (w)
300
Rthjc, Max, (k/w)
0.42
Package Style
TO-220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
PolarHV
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
D25
DM
AR
GSS
DSS
© 2006 IXYS All rights reserved
J
JM
stg
L
DSS
DGR
GS
GSM
AR
AS
D
SOLD
GS(th)
DS(on)
d
J
DSS
= 25°C, unless otherwise specified)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque
TO-220
TO-263
TO-3P
Test Conditions
V
V
V
V
V
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
S
V
J
J
C
C
C
C
C
J
C
GS
DS
GS
DS
GS
GS
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
≤ I
≤ 150°C, R
= 25°C
TM
= 0 V, I
= V
= ±30 V
= V
= 0 V
= 10 V, I
DM
, di/dt ≤ 100 A/μs, V
GS
DSS
, I
D
D
DC
D
= 250 μA
= 250μA
, V
G
= 0.5 I
= 10 Ω
DS
= 0
D25
(TO-220, TO-3P)
GS
= 1 MΩ
DD
T
≤ V
J
= 125°C
DSS
JM
IXTA 16N50P
IXTP 16N50P
IXTQ 16N50P
,
500
Min.
3.0
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
Typ.
1.13/10 Nm/lb.in.
500
500
±30
±40
750
300
150
300
260
5.5
16
48
16
25
10
4
3
±10
100
Max.
5.5
400 mΩ
5
V/ns
mJ
mJ
nA
μA
μA
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
V
V
g
g
g
TO-3P (IXTQ)
TO-263 (IXTA)
TO-220 (IXTP)
Features
Advantages
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Easy to mount
Space savings
High power density
V
I
R
G
D25
G = Gate
S = Source
DS(on)
DSS
D
G
S
D
G
S
≤ ≤ ≤ ≤ ≤ 400 mΩ Ω Ω Ω Ω
= 500
=
S
D = Drain
TAB = Drain
16
DS99323E(03/06)
(TAB)
(TAB)
(TAB)
A
V
Related parts for IXTP16N50P
IXTP16N50P Summary of contents
... GSS DSS DS DSS 0.5 I DS(on D25 Pulse test, t ≤ 300 μs, duty cycle d ≤ © 2006 IXYS All rights reserved IXTA 16N50P IXTP 16N50P IXTQ 16N50P Maximum Ratings 500 = 1 MΩ 500 GS ±30 ± 750 ≤ DSS 300 -55 ... +150 150 -55 ... +150 ...
... Pulse test, t ≤ 300 μs, duty cycle d ≤ -di/dt = 100 A/μs TO-3P Outline IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 Characteristic Values (T = 25°C, unless otherwise specified) J Min ...
... DS(on) Junction Temperature 3 10V GS 2.8 2.5 2 16A D 1.9 1.6 1.3 1 0.7 0.4 -50 - Degrees Centigrade J Fig. 5. Maximum Drain Current v s. Case Temperature -50 - Degrees Centigrade J © 2006 IXYS All rights reserved 2.8 2.6 2.4 2 1.6 1.4 1.2 1 0.8 75 100 125 150 ...
... Q - NanoCoulombs G Fig. 11. Forward-Bias Safe Operating Area 100 R Limit DS(on 150º 25º 100 V - Volts DS IXYS reserves the right to change limits, test conditions, and dimensions 0.3 10,000 1,000 100 1.00 25µs 0.10 100µs 1ms 10m 0.01 0.0001 1000 IXTA 16N50P IXTP 16N50P IXTQ 16N50P Fig ...
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