IRFB59N10DPBF International Rectifier, IRFB59N10DPBF Datasheet

MOSFET N-CH 100V 59A TO-220AB

IRFB59N10DPBF

Manufacturer Part Number
IRFB59N10DPBF
Description
MOSFET N-CH 100V 59A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheets

Specifications of IRFB59N10DPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
25 mOhm @ 35.4A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
59A
Vgs(th) (max) @ Id
5.5V @ 250µA
Gate Charge (qg) @ Vgs
114nC @ 10V
Input Capacitance (ciss) @ Vds
2450pF @ 25V
Power - Max
3.8W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Current, Drain
59 A
Gate Charge, Total
76 nC
Package Type
TO-220AB
Polarization
N-Channel
Power Dissipation
200 W
Resistance, Drain To Source On
0.025 Ohm
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
20 ns
Time, Turn-on Delay
16 ns
Transconductance, Forward
18 S
Voltage, Breakdown, Drain To Source
100 V
Voltage, Forward, Diode
1.3 V
Voltage, Gate To Source
±30 V
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
30 V
Continuous Drain Current
59 A
Mounting Style
Through Hole
Gate Charge Qg
76 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRFB59N10DPBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFB59N10DPBF
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
IRFB59N10DPBF
Quantity:
9 000
l
l
l
Typical SMPS Topologies
l
www.irf.com
l
l
l
Absolute Maximum Ratings
l
Applications
Benefits
I
I
I
P
P
V
dv/dt
T
T
D
D
DM
Notes 
J
STG
D
D
GS
@ T
@ T
Effective C
App. Note AN1001)
UPS / Motor Control Inverters
Lead-Free
and Current
@T
@T
High frequency DC-DC converters
Half-bridge and Full-bridge DC-DC Converters
Full-bridge Inverters
Low Gate-to-Drain Charge to Reduce
Fully Characterized Capacitance Including
Fully Characterized Avalanche Voltage
Switching Losses
C
C
A
C
= 25°C
= 100°C
= 25°C
= 25°C
through ‡ are on page 11
OSS
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current 
Power Dissipation ‡
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw†
to Simplify Design, (See
Parameter
SMPS MOSFET
GS
GS
@ 10V
@ 10V
IRFB59N10D
TO-220AB
V
100V
DSS
300 (1.6mm from case )
HEXFET
-55 to + 175
10 lbf•in (1.1N•m)
R
IRFS59N10D
Max.
236
200
± 30
3.8
1.3
3.3
DS(on)
59
42
IRFSL59N10DPbF
D
IRFB59N10DPbF
IRFS59N10DPbF
0.025Ω
2
Pak
®
Power MOSFET
max
IRFSL59N10D
PD - 95378
TO-262
Units
W/°C
V/ns
59A
°C
W
I
A
V
D
1

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IRFB59N10DPBF Summary of contents

Page 1

... Notes  through ‡ are on page 11 www.irf.com SMPS MOSFET HEXFET V DSS 100V TO-220AB IRFB59N10D @ 10V GS @ 10V GS - 175 300 (1.6mm from case ) 10 lbf•in (1.1N• 95378 IRFB59N10DPbF IRFS59N10DPbF IRFSL59N10DPbF ® Power MOSFET R max I DS(on) D 0.025Ω 59A 2 D Pak TO-262 IRFS59N10D IRFSL59N10D Max ...

Page 2

IRFB/IRFS/IRFSL59N10DPbF Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS Gate-to-Source ...

Page 3

VGS TOP 15V 10V 8.0V 7.0V 6.0V 100 5.5V 5.0V BOTTOM 4. 5.0V 0.1 20µs PULSE WIDTH 0.01 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 1000 ...

Page 4

IRFB/IRFS/IRFSL59N10DPbF 100000 0V MHZ C iss = rss = oss = 10000 1000 100 ...

Page 5

T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.1 0.10 0.05 0.02 SINGLE PULSE 0.01 (THERMAL ...

Page 6

IRFB/IRFS/IRFSL59N10DPbF D.U 20V 0.01 Ω Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms ...

Page 7

D.U.T + ‚ -  Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery Current D.U.T. V Waveform DS Re-Applied Voltage Inductor Curent * Fig 14. For N-Channel HEXFET www.irf.com IRFB/IRFS/IRFSL59N10DPbF + • • ƒ • - „ - ...

Page 8

IRFB/IRFS/IRFSL59N10DPbF Dimensions are shown in millimeters (inches) 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) 4 15.24 (.600) 14.84 (.584 14.09 (.555) 13.47 (.530) 3X 1.40 (.055) 3X 1.15 (.045) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & ...

Page 9

Dimensions are shown in millimeters (inches) 2 THIS IS AN IRF530S WITH LOT CODE 8024 ASS EMBLED ON WW 02, 2000 IN THE AS SEMBLY LINE "L" Note: "P" in assembly line position indicates "Lead-Free" OR INT ERNAT IONAL ...

Page 10

IRFB/IRFS/IRFSL59N10DPbF TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information EXAMPLE: THIS IS AN IRL 3103L LOT CODE 1789 AS S EMB LED ON WW 19, 1997 EMB LY LINE "C" ...

Page 11

Dimensions are shown in millimeters (inches) TRR FEED DIRECTION 1.85 (.073) 1.65 (.065) TRL 10.90 (.429) 10.70 (.421) FEED DIRECTION 13.50 (.532) 12.80 (.504) 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION ...

Page 12

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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