IRFB59N10DPBF International Rectifier, IRFB59N10DPBF Datasheet - Page 2

• Manufacturer Part Number: IRFB59N10DPBF
• Description: MOSFET N-CH 100V 59A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFB59N10DPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 25 mOhm @ 35.4A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 59A
• Vgs(th) (max) @ Id: 5.5V @ 250µA
• Gate Charge (qg) @ Vgs: 114nC @ 10V
• Input Capacitance (ciss) @ Vds: 2450pF @ 25V
• Power - Max: 3.8W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Current, Drain: 59 A
• Gate Charge, Total: 76 nC
• Package Type: TO-220AB
• Polarization: N-Channel
• Power Dissipation: 200 W
• Resistance, Drain To Source On: 0.025 Ohm
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 20 ns
• Time, Turn-on Delay: 16 ns
• Transconductance, Forward: 18 S
• Voltage, Breakdown, Drain To Source: 100 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±30 V
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 59 A
• Mounting Style: Through Hole
• Gate Charge Qg: 76 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRFB59N10DPBF

Diode Characteristics
IRFB/IRFS/IRFSL59N10DPbF
Dynamic @ T
Avalanche Characteristics
Thermal Resistance
Static @ T
E
I
E
R
R
R
R
R
V
∆V
V
I
I
g
Q
Q
Q
t
t
t
t
C
C
C
C
C
C
I
I
V
t
Q
t
AR
DSS
GSS
d(on)
r
d(off)
f
SM
on
S
rr
2
fs
AS
AR
θJC
θCS
θJA
θJA
(BR)DSS
DS(on)
GS(th)
iss
oss
rss
oss
oss
oss
SD
g
gs
gd
rr
(BR)DSS
eff.
/∆T
J
Breakdown Voltage Temp. Coefficient
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
J
= 25°C (unless otherwise specified)
J
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Junction-to-Case
Case-to-Sink, Flat, Greased Surface †
Junction-to-Ambient†
Junction-to-Ambient‡
= 25°C (unless otherwise specified)
Parameter
Parameter
Parameter
Parameter
Parameter
–––
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
Min. Typ. Max. Units
3.0
Min. Typ. Max. Units
18
–––
–––
–––
–––
––– 0.75
Intrinsic turn-on time is negligible (turn-on is dominated by L
0.11 –––
2450 –––
3370 –––
–––
––– 0.025
–––
–––
–––
––– -100
–––
740
190
390
–––
690
–––
–––
–––
130
76
24
36
16
90
20
12
–––
114
–––
–––
–––
–––
–––
–––
–––
–––
236
–––
250
100
200
5.5
1.3
1.1
25
36
54
59
V/°C
nC
µA
nA
ns
pF
µC
ns
Ω
V
V
S
Typ.
Typ.
V
0.50
–––
–––
–––
–––
–––
–––
Reference to 25°C, I
V
V
V
V
I
R
V
V
V
ƒ = 1.0MHz†
V
V
V
V
V
V
V
V
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs „
I
D
D
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DD
GS
GS
DS
GS
GS
GS
J
J
G
= 35.4A
= 35.4A
= 25°C, I
= 25°C, I
= 2.5Ω
= V
= 100V, V
= 80V, V
= 50V, I
= 80V
= 25V
= 0V, I
= 10V, I
= 30V
= -30V
= 10V, „
= 50V
= 10V „
= 0V
= 0V, V
= 0V, V
= 0V, V
GS
, I
D
S
F
DS
D
D
D
DS
DS
Conditions
= 250µA
GS
Conditions
Conditions
= 35.4A, V
= 35.4A
= 35.4A
= 250µA
= 35.4A
GS
= 0V to 80V …
Max.
Max.
= 1.0V, ƒ = 1.0MHz
= 80V, ƒ = 1.0MHz
35.4
0.75
510
= 0V, T
–––
20
62
40
= 0V
D
www.irf.com
= 1mA
J
GS
„
= 150°C
G
= 0V „
Units
Units
S
°C/W
+L
mJ
mJ
A
D
D
S
)