IRFB59N10DPBF International Rectifier, IRFB59N10DPBF Datasheet - Page 5

• Manufacturer Part Number: IRFB59N10DPBF
• Description: MOSFET N-CH 100V 59A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFB59N10DPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 25 mOhm @ 35.4A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 59A
• Vgs(th) (max) @ Id: 5.5V @ 250µA
• Gate Charge (qg) @ Vgs: 114nC @ 10V
• Input Capacitance (ciss) @ Vds: 2450pF @ 25V
• Power - Max: 3.8W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Current, Drain: 59 A
• Gate Charge, Total: 76 nC
• Package Type: TO-220AB
• Polarization: N-Channel
• Power Dissipation: 200 W
• Resistance, Drain To Source On: 0.025 Ohm
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 20 ns
• Time, Turn-on Delay: 16 ns
• Transconductance, Forward: 18 S
• Voltage, Breakdown, Drain To Source: 100 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±30 V
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 59 A
• Mounting Style: Through Hole
• Gate Charge Qg: 76 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRFB59N10DPBF

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60
50
40
30
20
10
0.01
0
0.1
25
0.00001
1
Fig 9. Maximum Drain Current Vs.
D = 0.50
0.20
0.10
0.05
0.02
0.01
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
50
T , Case Temperature ( C)
Case Temperature
C
75
(THERMAL RESPONSE)
0.0001
SINGLE PULSE
100
125
°
t , Rectangular Pulse Duration (sec)
1
150
0.001
IRFB/IRFS/IRFSL59N10DPbF
175
Fig 10b. Switching Time Waveforms
Fig 10a. Switching Time Test Circuit
V
90%
10%
V
0.01
DS
GS
1. Duty factor D = t / t
2. Peak T = P
Notes:
t
d(on)
J
t
r
≤ 0.1 %
DM
≤ 1
x Z
1
0.1
thJC
P
2
DM
+ T
C
t
t
d(off)
1
t
2
t
f
1
+
-
5