MOSFET N-CH 20V 20A 8-SOIC

IRF3717

Manufacturer Part NumberIRF3717
DescriptionMOSFET N-CH 20V 20A 8-SOIC
ManufacturerInternational Rectifier
SeriesHEXFET®
IRF3717 datasheet
 

Specifications of IRF3717

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureLogic Level Gate
Rds On (max) @ Id, Vgs4.4 mOhm @ 20A, 10VDrain To Source Voltage (vdss)20V
Current - Continuous Drain (id) @ 25° C20AVgs(th) (max) @ Id2.45V @ 250µA
Gate Charge (qg) @ Vgs33nC @ 4.5VInput Capacitance (ciss) @ Vds2890pF @ 10V
Power - Max2.5WMounting TypeSurface Mount
Package / Case8-SOIC (3.9mm Width)Lead Free Status / RoHS StatusContains lead / RoHS non-compliant
Other names*IRF3717  
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Applications
Synchronous MOSFET for Notebook
l
Processor Power
Synchronous Rectifier MOSFET for
l
Isolated DC-DC Converters in
Networking Systems
Benefits
Ultra-Low Gate Impedance
l
Very Low R
l
DS(on)
Fully Characterized Avalanche Voltage
l
and Current
Absolute Maximum Ratings
Parameter
V
Drain-to-Source Voltage
DS
V
Gate-to-Source Voltage
GS
Continuous Drain Current, V
I
@ T
= 25°C
D
A
Continuous Drain Current, V
I
@ T
= 70°C
D
A
Pulsed Drain Current
I
DM
P
@T
= 25°C
Power Dissipation
D
A
P
@T
= 70°C
Power Dissipation
D
A
Linear Derating Factor
T
Operating Junction and
J
T
Storage Temperature Range
STG
Thermal Resistance
Parameter
R
Junction-to-Drain Lead
JL
Junction-to-Ambient
R
JA
Notes  through
are on page 10
www.irf.com
V
R
DSS
DS(on)
4.4m @V
20V
1
S
2
S
3
S
4
G
Top View
@ 10V
GS
@ 10V
GS
Typ.
–––
f
–––
IRF3717
HEXFET Power MOSFET
max
I
D
= 10V
20A
GS
A
A
8
D
7
D
6
D
5
D
SO-8
Max.
Units
20
V
± 20
20
16
A
160
2.5
W
1.6
0.02
W/°C
-55 to + 150
°C
Max.
Units
20
°C/W
50
2/20/04
1

IRF3717 Summary of contents

  • Page 1

    ... JL Junction-to-Ambient R JA Notes  through are on page 10 „ www.irf.com V R DSS DS(on) 4.4m @V 20V Top View @ 10V GS @ 10V GS Typ. ––– f ––– IRF3717 HEXFET Power MOSFET max 10V 20A SO-8 Max. Units 20 V ± 160 2.5 W 1.6 0.02 W/° ...

  • Page 2

    Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th Gate Threshold Voltage ...

  • Page 3

    PULSE WIDTH Tj = 25°C 2.5V 0.1 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 100 150° 25° ...

  • Page 4

    0V MHZ C iss = SHORTED C rss = oss = 10000 C iss C oss 1000 ...

  • Page 5

    Ambient Temperature (°C) Fig 9. Maximum Drain Current vs. Ambient Temperature 100 D = 0.50 0.20 10 0.10 0.05 1 0.02 0.01 0.1 SINGLE PULSE ( THERMAL RESPONSE ...

  • Page 6

    D.U 20V Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50K .2 F 12V ...

  • Page 7

    D.U.T + ƒ ‚ -  Fig 15. Vds Vgs(th) Qgs1 Qgs2 www.irf.com Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery „ Current - + D.U.T. V Waveform DS V Re-Applied G + Voltage ...

  • Page 8

    Power MOSFET Selection for Non-Isolated DC/DC Converters Control FET loss conduction switching drive This can be expanded and approximated by loss rms ds( ...

  • Page 9

    SO-8 Package Details Dimensions are shown in millimeters (inches 0.25 [.010 NOT DIMENS IONING & ...

  • Page 10

    SO-8 Tape and Reel Dimensions are shown in millimeters (inches) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS ...