IRF3717 International Rectifier, IRF3717 Datasheet - Page 5

• Manufacturer Part Number: IRF3717
• Description: MOSFET N-CH 20V 20A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF3717

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.4 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 2.45V @ 250µA
• Gate Charge (qg) @ Vgs: 33nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2890pF @ 10V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF3717

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0.001
20
15
10
0.01
100
0.1
5
0
10
1
1E-006
25
Fig 9. Maximum Drain Current vs.
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
D = 0.50
0.10
0.05
0.01
0.20
0.02
T A , Ambient Temperature (°C)
50
Ambient Temperature
1E-005
SINGLE PULSE
( THERMAL RESPONSE )
75
100
0.0001
125
t 1 , Rectangular Pulse Duration (sec)
0.001
150
J
J
1
Ci= i Ri
1
Ci
0.01
Fig 10. Threshold Voltage vs. Temperature
i Ri
2.5
2.0
1.5
1.0
R
1
R
1
-75
2
R
2
-50
2
R
2
0.1
-25
R
3
I D = 250µA
3
R
T J , Temperature ( °C )
3
3
1. Duty factor D =
2. Peak T
Notes:
0
R
4
4
R
4
25
J
1
4
= P
C
DM
Ri (°C/W)
50
1.4174
11.3607
21.8639
15.3721
x Z
t / t
1
thJA
P
2
75
DM
+ T
10
A
100
t
1
0.000277
0.103855
1.362000
39.60000
t
2
i (sec)
125
5
150
100