MOSFET N-CH 200V 30A TO-247AC

IRFP250N

Manufacturer Part NumberIRFP250N
DescriptionMOSFET N-CH 200V 30A TO-247AC
ManufacturerInternational Rectifier
SeriesHEXFET®
IRFP250N datasheet
 


Specifications of IRFP250N

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs75 mOhm @ 18A, 10VDrain To Source Voltage (vdss)200V
Current - Continuous Drain (id) @ 25° C30AVgs(th) (max) @ Id4V @ 250µA
Gate Charge (qg) @ Vgs123nC @ 10VInput Capacitance (ciss) @ Vds2159pF @ 25V
Power - Max214WMounting TypeThrough Hole
Package / CaseTO-247-3 (Straight Leads), TO-247ACLead Free Status / RoHS StatusContains lead / RoHS non-compliant
Other names*IRFP250N  
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Advanced Process Technology
l
l
Dynamic dv/dt Rating
175°C Operating Temperature
l
Fast Switching
l
l
Fully Avalanche Rated
Ease of Paralleling
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l
Simple Drive Requirements
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized device design that
HEXFET Power MOSFETs are well known for, provides the designer with an
extremely efficient and reliable device for use in a wide variety of applications.
The TO-247 package is preferred for commercial-industrial applications where
higher power levels preclude the use of TO-220 devices. The TO-247 is similar
but superior to the earlier TO-218 package because of its isolated mounting hole.
Absolute Maximum Ratings
Parameter
I
@ T
= 25°C
Continuous Drain Current, V
D
C
I
@ T
= 100°C
Continuous Drain Current, V
D
C
I
Pulsed Drain Current
DM
P
@T
= 25°C
Power Dissipation
D
C
Linear Derating Factor
V
Gate-to-Source Voltage
GS
E
Single Pulse Avalanche Energy
AS
I
Avalanche Current
AR
E
Repetitive Avalanche Energy
AR
dv/dt
Peak Diode Recovery dv/dt
T
Operating Junction and
J
T
Storage Temperature Range
STG
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Thermal Resistance
Parameter
R
Junction-to-Case
θJC
R
Case-to-Sink, Flat, Greased Surface
θCS
R
Junction-to-Ambient
θJA
www.irf.com
G
@ 10V
GS
@ 10V
GS



ƒ
300 (1.6mm from case )
Typ.
0.24
PD - 94008A
IRFP250N
®
HEXFET
Power MOSFET
D
V
= 200V
DSS
R
= 0.075Ω
DS(on)
I
= 30A
D
S
TO-247AC
Max.
Units
30
21
A
120
214
W
1.4
W/°C
± 20
V
315
mJ
30
A
21
mJ
8.6
V/ns
-55 to +175
°C
10 lbf•in (1.1N•m)
Max.
Units
–––
0.7
–––
°C/W
–––
40
1
10/7/04

IRFP250N Summary of contents

  • Page 1

    ... R Junction-to-Case θJC R Case-to-Sink, Flat, Greased Surface θCS R Junction-to-Ambient θJA www.irf.com G @ 10V GS @ 10V GS  ‚   ƒ 300 (1.6mm from case ) Typ. 0. 94008A IRFP250N ® HEXFET Power MOSFET 200V DSS R = 0.075Ω DS(on 30A D S TO-247AC Max. Units 120 214 W 1.4 W/° ...

  • Page 2

    ... IRFP250N Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge ...

  • Page 3

    ... TOP 100 BOTTOM 10 1 ° 0.1 100 0.1 3 3.0 2.5 2.0 1.5 1.0 0.5 = 50V 0.0 -60 -40 -20 0 9.0 10.0 IRFP250N VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 4.5V 20µs PULSE WIDTH ° 175 Drain-to-Source Voltage (V) DS 30A V = 10V ...

  • Page 4

    ... IRFP250N 5000 0V MHZ C iss = SHORTED C rss = C gd 4000 C oss = 3000 Ciss 2000 Coss 1000 Crss Drain-to-Source Voltage (V) 1000 100 ° 175 0.1 0.2 0.4 0.6 0.8 1.0 V ,Source-to-Drain Voltage ( 100 1000 1000 OPERATION IN THIS AREA LIMITED 100 ° 175 Single Pulse 1 1 ...

  • Page 5

    ... SINGLE PULSE 0.02 (THERMAL RESPONSE) 0.01 0.01 0.00001 0.0001 www.irf.com 90% 90% 150 175 150 175 ° 10% 10% ° Duty factor Peak 0.001 0. Rectangular Pulse Duration (sec) 1 IRFP250N + - ≤ 1 ≤ 1 ≤ 0.1 % ≤ 0 d(on) d(on d(off) d(off Notes ...

  • Page 6

    ... IRFP250N D.U 20V 0.01 Ω Charge 6 800 15V 600 DRIVER + - V DD 400 A 200 V (BR)DSS 0 25 Starting T , Junction Temperature ( TOP 7.3A 13A BOTTOM 18A 50 75 100 125 150 ° J Current Regulator Same Type as D.U.T. 50KΩ .2µF 12V .3µF D.U. 3mA Current Sampling Resistors www ...

  • Page 7

    ... P.W. D.U.T. I Waveform SD Reverse Recovery Current D.U.T. V Waveform DS Re-Applied Voltage Inductor Curent www.irf.com + • • ƒ • - „ • • • • P.W. Period D = Period Body Diode Forward Current di/dt Diode Recovery dv/dt Body Diode Forward Drop Ripple ≤ 5% IRFP250N + - V =10V ...

  • Page 8

    ... IRFP250N EXAMPLE: T HIS IS AN IRFPE30 WITH AS SEMBLY LOT CODE 5657 AS S EMBLED ON WW 35, 2000 IN THE AS SEMBLY LINE "H" Note: "P" in assembly line position indicates "Lead-Free" This product has been designed and qualified for the Automotive [Q101] market. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 ...

  • Page 9

    Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...