IRFB23N20DPBF International Rectifier, IRFB23N20DPBF Datasheet
IRFB23N20DPBF
Manufacturer Part Number
IRFB23N20DPBF
Description
MOSFET N-CH 200V 24A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Specifications of IRFB23N20DPBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
100 mOhm @ 14A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
24A
Vgs(th) (max) @ Id
5.5V @ 250µA
Gate Charge (qg) @ Vgs
86nC @ 10V
Input Capacitance (ciss) @ Vds
1960pF @ 25V
Power - Max
3.8W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Channel Type
N
Current, Drain
24 A
Gate Charge, Total
57 nC
Package Type
TO-220AB
Polarization
N-Channel
Power Dissipation
170 W
Resistance, Drain To Source On
0.1 Ohm
Resistance, Thermal, Junction To Case
0.9 °C/W
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
26 ns
Time, Turn-on Delay
14 ns
Transconductance, Forward
13 S
Voltage, Breakdown, Drain To Source
200 V
Voltage, Drain To Source
200 V
Voltage, Forward, Diode
1.3 V
Voltage, Gate To Source
±30 V
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
30 V
Continuous Drain Current
24 A
Mounting Style
Through Hole
Gate Charge Qg
57 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRFB23N20DPBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRFB23N20DPBF
Manufacturer:
IR
Quantity:
3 500
Company:
Part Number:
IRFB23N20DPBF
Manufacturer:
DIAUDIO
Quantity:
720
Part Number:
IRFB23N20DPBF
Manufacturer:
IR
Quantity:
20 000
Notes through …
l
Typical SMPS Topologies
l
l
l
l
l
Absolute Maximum Ratings
Applications
Benefits
I
I
I
P
P
V
dv/dt
T
T
D
D
DM
J
STG
D
D
GS
@ T
@ T
Effective C
App. Note AN1001)
and Current
Lead-Free
@T
@T
Telecom 48V input Forward Converter
High frequency DC-DC converters
Low Gate-to-Drain Charge to Reduce
Fully Characterized Capacitance Including
Fully Characterized Avalanche Voltage
Switching Losses
C
C
A
C
= 25°C
= 100°C
= 25°C
= 25°C
OSS
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation ‡
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw†
are on page 11
to Simplify Design, (See
Parameter
SMPS MOSFET
GS
GS
@ 10V
@ 10V
IRFB23N20D
TO-220AB
V
200V
DSS
300 (1.6mm from case )
HEXFET
-55 to + 175
10 lbf•in (1.1N•m)
IRFS23N20D
R
Max.
170
± 30
3.8
1.1
3.3
DS(on)
24
17
96
IRFSL23N20DPbF
D
IRFB23N20DPbF
IRFS23N20DPbF
2
0.10Ω
Pak
®
Power MOSFET
max
IRFSL23N20D
PD - 95536
TO-262
Units
W/°C
V/ns
24A
°C
W
I
A
V
D
1
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IRFB23N20DPBF Summary of contents
Page 1
... Notes through … are on page 11 SMPS MOSFET HEXFET V DSS 200V TO-220AB IRFB23N20D @ 10V GS @ 10V GS - 175 300 (1.6mm from case ) 10 lbf•in (1.1N• 95536 IRFB23N20DPbF IRFS23N20DPbF IRFSL23N20DPbF ® Power MOSFET R max I DS(on) D 0.10Ω 24A 2 D Pak TO-262 IRFS23N20D IRFSL23N20D Max ...
Page 2
IRFB/IRFS/IRFSL23N20DPbF Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS Gate-to-Source ...
Page 3
IRFB/IRFS/IRFSL23N20DPbF Dimensions are shown in millimeters (inches) 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) 4 15.24 (.600) 14.84 (.584 14.09 (.555) 13.47 (.530) 3X 1.40 (.055) 3X 1.15 (.045) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & ...