IRFB23N20DPBF International Rectifier, IRFB23N20DPBF Datasheet - Page 6

MOSFET N-CH 200V 24A TO-220AB

IRFB23N20DPBF

Manufacturer Part Number
IRFB23N20DPBF
Description
MOSFET N-CH 200V 24A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheets

Specifications of IRFB23N20DPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
100 mOhm @ 14A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
24A
Vgs(th) (max) @ Id
5.5V @ 250µA
Gate Charge (qg) @ Vgs
86nC @ 10V
Input Capacitance (ciss) @ Vds
1960pF @ 25V
Power - Max
3.8W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Channel Type
N
Current, Drain
24 A
Gate Charge, Total
57 nC
Package Type
TO-220AB
Polarization
N-Channel
Power Dissipation
170 W
Resistance, Drain To Source On
0.1 Ohm
Resistance, Thermal, Junction To Case
0.9 °C/W
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
26 ns
Time, Turn-on Delay
14 ns
Transconductance, Forward
13 S
Voltage, Breakdown, Drain To Source
200 V
Voltage, Drain To Source
200 V
Voltage, Forward, Diode
1.3 V
Voltage, Gate To Source
±30 V
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
30 V
Continuous Drain Current
24 A
Mounting Style
Through Hole
Gate Charge Qg
57 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRFB23N20DPBF

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IRFB/IRFS/IRFSL23N20DPbF
Fig 12a. Unclamped Inductive Test Circuit
6
Fig 12b. Unclamped Inductive Waveforms
Fig 13a. Basic Gate Charge Waveform
I
AS
V
R G
20V
G
V DS
Q
t p
GS
t p
I AS
D.U.T
0.01 Ω
L
Charge
Q
Q
V
GD
G
(BR)DSS
15V
DRIVER
+
-
V DD
A
600
500
400
300
200
100
0
25
Fig 12c. Maximum Avalanche Energy
Fig 13b. Gate Charge Test Circuit
Starting T , Junction Temperature ( C)
50
12V
V
GS
Vs. Drain Current
Same Type as D.U.T.
J
Current Regulator
.2µF
75
50KΩ
3mA
Current Sampling Resistors
100
.3µF
I
G
125
TOP
BOTTOM
www.irf.com
D.U.T.
I
D
150
+
-
V
DS
°
5.9A
I D
10A
14A
175

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