IXTQ180N085T IXYS, IXTQ180N085T Datasheet

MOSFET N-CH 85V 180A TO-3P

IXTQ180N085T

Manufacturer Part Number
IXTQ180N085T
Description
MOSFET N-CH 85V 180A TO-3P
Manufacturer
IXYS
Series
TrenchMV™r
Datasheet

Specifications of IXTQ180N085T

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
5.5 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
85V
Current - Continuous Drain (id) @ 25° C
180A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
170nC @ 10V
Input Capacitance (ciss) @ Vds
7500pF @ 25V
Power - Max
430W
Mounting Type
Through Hole
Package / Case
TO-3P
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0055 Ohms
Drain-source Breakdown Voltage
85 V
Continuous Drain Current
180 A
Power Dissipation
430 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
85
Id(cont), Tc=25°c, (a)
180
Rds(on), Max, Tj=25°c, (?)
0.0055
Ciss, Typ, (pf)
8800
Qg, Typ, (nc)
170
Trr, Typ, (ns)
63
Trr, Max, (ns)
-
Pd, (w)
430
Rthjc, Max, (k/w)
0.35
Package Style
TO-3P
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
TrenchMV
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
I
I
I
I
E
dv/dt
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
© 2006 IXYS CORPORATION All rights reserved
D25
LRMS
DM
AR
GSS
DSS
L
SOLD
DGR
D
J
JM
stg
GS(th)
DSS
GSM
AS
DS(on)
d
J
DSS
= 25° C unless otherwise specified)
Test Conditions
T
T
Transient
T
Lead Current Limit, RMS
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
Mounting torque
TO-3P
TO-247
Test Conditions
V
V
V
V
V
V
S
C
C
C
C
C
GS
J
J
J
DS
GS
DS
GS
GS
= 25° C to 175° C
= 25° C to 175° C; R
= 25° C
= 25° C, pulse width limited by T
= 25° C
= 25° C
≤ I
≤ 175° C, R
= 25° C
= 0 V, I
= V
= ± 20 V, V
= V
= 0 V
= 10 V, I
DM
, di/dt ≤ 100 A/µs, V
GS
TM
DSS
, I
D
D
= 250 µA
D
= 250 µA
G
= 25 A, Note 1
DS
= 5 Ω
= 0 V
GS
Preliminary Technical Information
= 1 MΩ
DD
T
J
≤ V
= 150° C
DSS
IXTH180N085T
IXTQ180N085T
JM
Min.
2.0
85
Characteristic Values
-55 ... +175
-55 ... +175
Maximum Ratings
1.13 / 10 Nm/lb.in.
Typ.
4.2
± 20
180
480
430
300
260
175
1.0
5.5
85
85
75
25
± 200
3
6
250
Max.
4.0
5.5
5
V/ns
m Ω
nA
µA
µA
°C
°C
°C
°C
°C
W
V
V
V
A
A
A
V
A
g
g
V
J
Features
Advantages
Applications
Ultra-low On Resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
175 ° C Operating Temperature
Easy to mount
Space savings
High power density
- Motor Drives
- 42V Power Bus
- ABS Systems
Primary Switch for 24V and 48V
TO-247 (IXTH)
DC/DC Converters and Off-line UPS
V
I
R
TO-3P (IXTQ)
High Current Switching
G = Gate
S = Source
D25
Systems
Applications
Automotive
G
DSS
DS(on)
D
G
S
D
=
= 180
≤ ≤ ≤ ≤ ≤
S
D = Drain
TAB = Drain
5.5 m Ω Ω Ω Ω Ω
85
DS99701 (11/06)
(TAB)
(TAB)
A
V

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IXTQ180N085T Summary of contents

Page 1

... GS(th ± GSS DSS DS DSS Note 1 DS(on © 2006 IXYS CORPORATION All rights reserved Preliminary Technical Information IXTH180N085T IXTQ180N085T Maximum Ratings MΩ ± 20 180 75 480 JM 25 1.0 ≤ DSS 430 -55 ... +175 175 -55 ... +175 300 260 1. Nm/lb.in. 5.5 6 Characteristic Values Min. Typ. 85 2.0 ± ...

Page 2

... DSS 170 , DSS D 46 0.25 Characteristic Values Min. Typ 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTH180N085T IXTQ180N085T TO-247AD Outline Max Terminals Gate 3 - Source nC Dim. Millimeter nC Min. Max. A 4.7 5 2.2 2. 2.2 2.6 0.35 °C ...

Page 3

... 0.6 0.7 0.8 0 10V 1.2 1.4 1.6 1.8 2 2.2 = 90A Value 175º 25ºC J 160 200 240 280 IXTQ180N085T Fig. 2. Extended Output Characteristics @ 25ºC 280 V = 10V GS 9V 240 8V 200 7V 160 6V 120 Volts DS Fig Normalized to I DS(on) vs. Junction Temperature 2 10V 2.4 GS 2.2 2 ...

Page 4

... IXYS reserves the right to change limits, test conditions, and dimensions. 180 160 T = -40ºC J 25ºC 140 125ºC 120 100 5 25ºC J 0.9 1 1.1 1.2 1.3 1.00 C iss 0.10 C oss C rss 0. IXTH180N085T IXTQ180N085T Fig. 8. Transconductance 40ºC J 25ºC 150º 120 I - Amperes D Fig. 10. Gate Charge 43V 25A 10mA G 7 ...

Page 5

... I = 50A 25A 100 160 T = 125º 140 25ºC J 120 76 100 25º 125º IXTH180N085T IXTQ180N085T Fig. 14. Resistive Turn-on Rise Time vs. Drain Current Ω 10V 43V Amperes D Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 50A 25A d(off Ω ...

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