IXTQ160N10T IXYS, IXTQ160N10T Datasheet

MOSFET N-CH 100V 160A TO-3P

IXTQ160N10T

Manufacturer Part Number
IXTQ160N10T
Description
MOSFET N-CH 100V 160A TO-3P
Manufacturer
IXYS
Series
TrenchMV™r
Datasheet

Specifications of IXTQ160N10T

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
7 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
160A
Vgs(th) (max) @ Id
4.5V @ 250µA
Gate Charge (qg) @ Vgs
132nC @ 10V
Input Capacitance (ciss) @ Vds
6600pF @ 25V
Power - Max
430W
Mounting Type
Through Hole
Package / Case
TO-3P
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.007 Ohms
Drain-source Breakdown Voltage
100 V
Continuous Drain Current
160 A
Power Dissipation
430 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
100
Id(cont), Tc=25°c, (a)
160
Rds(on), Max, Tj=25°c, (?)
0.0070
Ciss, Typ, (pf)
6600
Qg, Typ, (nc)
132
Trr, Typ, (ns)
100
Trr, Max, (ns)
-
Pd, (w)
430
Rthjc, Max, (k/w)
0.35
Package Style
TO-3P
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
TrenchMV
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
I
I
I
I
E
dv/dt
P
T
T
T
T
T
Weight
Symbol
(T
BV
V
I
I
R
© 2006 IXYS CORPORATION All rights reserved
M
D25
LRMS
DM
AR
GSS
DSS
L
SOLD
DGR
AS
D
J
JM
stg
GS(th)
DSS
GSM
DS(on)
d
J
DSS
= 25°C unless otherwise specified)
Test Conditions
T
T
Transient
T
Lead Current Limit, RMS
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
Mounting torque
TO-3P
TO-247
Test Conditions
V
V
V
V
V
S
V
C
C
C
C
C
GS
J
J
J
GS
GS
DS
DS
GS
= 25°C to 175°C
= 25°C to 175°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
≤ I
≤ 175°C, R
= 25°C
= 0 V, I
= V
= ± 20 V, V
= V
= 0 V
= 10 V, I
DM
, di/dt ≤ 100 A/μs, V
GS
TM
DSS
, I
D
D
= 250 μA
D
= 250 μA
= 25 A, Notes 1, 2
G
DS
= 5 Ω
= 0 V
GS
Preliminary Technical Information
= 1 MΩ
DD
T
≤ V
J
= 150°C
DSS
IXTH160N10T
IXTQ160N10T
JM
100
Min.
2.5
Characteristic Values
-55 ... +175
-55 ... +175
Maximum Ratings
1.13 / 10 Nm/lb.in.
Typ.
5.8
± 30
100
100
160
430
500
430
300
260
175
5.5
75
25
± 200
3
6
250
Max.
4.5
7.0
5
V/ns
mJ
nA
μA
μA
°C
°C
°C
°C
°C
W
V
V
V
A
A
A
V
A
g
g
V
TO-247 (IXTH)
Features
Advantages
Applications
TO-3P (IXTQ)
G = Gate
S = Source
Ultra-low On Resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
175 °C Operating Temperature
Easy to mount
Space savings
High power density
Automotive
- Motor Drives
- 42V Power Bus
- ABS Systems
DC/DC Converters and Off-line UPS
Primary Switch for 24V and 48V
G
Electronic Valve Train Systems
V
I
R
High Current Switching
High Voltage Synchronous Recifier
Distributed Power Architechtures
D25
Systems
Applications
D
DSS
DS(on)
and VRMs
G
S
D
S
= 100
= 160
≤ ≤ ≤ ≤ ≤
D = Drain
TAB = Drain
7.0 mΩ Ω Ω Ω Ω
DS99710 (11/06)
(TAB)
(TAB)
A
V

Related parts for IXTQ160N10T

IXTQ160N10T Summary of contents

Page 1

... GSS DSS DS DSS Notes 1, 2 DS(on © 2006 IXYS CORPORATION All rights reserved Preliminary Technical Information IXTH160N10T IXTQ160N10T Maximum Ratings 100 = 1 MΩ 100 GS ± 30 160 75 430 JM 25 500 ≤ DSS 430 -55 ... +175 175 -55 ... +175 300 260 1. Nm/lb.in. 5.5 6 Characteristic Values Min ...

Page 2

... DSS D 40 0.25 Characteristic Values Min. Typ. JM 100 Kelvin test contact DS(on) The Technical Specifications 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTH160N10T IXTQ160N10T TO-247 AD Outline Max Terminals Gate 3 - Source nC Dim. Millimeter nC Min. Max. A 4.7 5.3 ...

Page 3

... T - Degrees Centigrade J Fig. 6. Drain Current vs. Case Temperature External Lead Current Limit for TO-263 (7-Lead) 80 External Lead Current Limit for TO-3P, TO-220, & TO-263 -50 - Degrees Centigrade C IXTH160N10T IXTQ160N10T 160A Value D = 160A 80A D 100 125 150 175 100 125 150 175 ...

Page 4

... T = 25º 1.1 1.2 1.3 1.4 1.00 C iss C oss 0.10 C rss 0.01 0.0001 IXTH160N10T IXTQ160N10T Fig. 8. Transconductance 40ºC J 25ºC 150º 100 120 140 I - Amperes D Fig. 10. Gate Charge V = 50V 25A 10mA NanoCoulombs G Fig. 12. Maximum Transient Thermal Impedance 0.001 ...

Page 5

... Fig. 18. Resistive Turn-off Switching Times v s. Gate Resistance d(off 125º 10V 25A 50V Ohms G IXYS REF: T_160N10T (5V) 11-16-06-A.xls IXTQ160N10T T = 25º 125º 120 - - - - 115 = 10V 110 105 100 105 115 125 205 190 175 160 145 I = 50A D 130 115 ...

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