IXTA180N10T IXYS, IXTA180N10T Datasheet

MOSFET N-CH 100V 180A TO-263

IXTA180N10T

Manufacturer Part Number
IXTA180N10T
Description
MOSFET N-CH 100V 180A TO-263
Manufacturer
IXYS
Series
TrenchMV™r
Datasheet

Specifications of IXTA180N10T

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
6.4 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
180A
Vgs(th) (max) @ Id
4.5V @ 250µA
Gate Charge (qg) @ Vgs
151nC @ 10V
Input Capacitance (ciss) @ Vds
6900pF @ 25V
Power - Max
480W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0064 Ohms
Drain-source Breakdown Voltage
100 V
Continuous Drain Current
180 A
Power Dissipation
480 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
100
Id(cont), Tc=25°c, (a)
180
Rds(on), Max, Tj=25°c, (?)
0.0064
Ciss, Typ, (pf)
6900
Qg, Typ, (nc)
151
Trr, Typ, (ns)
72
Trr, Max, (ns)
-
Pd, (w)
480
Rthjc, Max, (k/w)
0.31
Package Style
TO-263
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
TrenchMV
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
I
I
I
I
E
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
© 2008 IXYS CORPORATION, All rights reserved
D25
LRMS
DM
AR
GSS
DSS
J
JM
stg
L
SOLD
DSS
DGR
GSM
AS
D
GS(th)
DS(on)
d
J
DSS
= 25°C unless otherwise specified)
Test Conditions
T
T
Transient
T
Lead Current limit, RMS
T
T
T
T
1.6mm (0.062in.) from case for 10s
Plastic body for 10 seconds
Mounting torque (TO-220)
TO-263
TO-220
V
V
V
V
V
V
Test Conditions
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
GS
= 25°C to 175°C
= 25°C to 175°C, R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
= 0V, I
= V
= ± 20V, V
= V
= 0V
= 10V, I
GS
TM
DSS
, I
D
D
D
= 250μA
= 250μA
= 25A, Notes 1, 2
DS
= 0V
GS
= 1MΩ
T
J
= 150°C
JM
IXTA180N10T
IXTP180N10T
-55 ... +175
-55 ... +175
Characteristic Values
Min.
100
2.5
Maximum Ratings
1.13/10
± 30
100
100
180
450
750
480
175
300
260
Typ.
2.5
3.0
75
25
5.7
± 100 nA
Nm/lb.in
100 μA
Max.
4.5
6.4 mΩ
5 μA
mJ
°C
°C
°C
°C
°C
W
V
V
V
A
A
A
A
V
V
g
g
Features
Advantages
Applications
V
I
R
TO-263 (IXTA)
TO-220 (IXTP)
G = Gate
S = Source
D25
Ultra-low On Resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
175 °C Operating Temperature
Systems
Easy to mount
Space savings
High power density
Automotive
- Motor Drives
- 42V Power Bus
- ABS Systems
DC/DC Converters and Off-line UPS
Primary Switch for 24V and 48V
Distributed Power Architechtures
and VRMs
Electronic Valve Train Systems
High Current Switching Applications
High Voltage Synchronous Recifier
DS(on)
DSS
G
G
D
S
≤ ≤ ≤ ≤ ≤
= 100V
= 180A
S
D = Drain
TAB = Drain
6.4mΩ Ω Ω Ω Ω
(TAB)
(TAB)
DS99651A(3/08)

Related parts for IXTA180N10T

IXTA180N10T Summary of contents

Page 1

... GSS DSS DS DSS 10V 25A, Notes 1, 2 DS(on © 2008 IXYS CORPORATION, All rights reserved IXTA180N10T IXTP180N10T Maximum Ratings 100 = 1MΩ 100 GS ± 30 180 75 450 JM 25 750 480 -55 ... +175 175 -55 ... +175 300 260 1.13/10 2.5 3.0 Characteristic Values Min. ...

Page 2

... Characteristic Values Min. Typ 5.1 0.18 Kelvin test contact location must be DS(on) 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTA180N10T IXTP180N10T TO-263 (IXTA) Outline Max Pins Gate 3 - Source 4, TAB - Drain nC Dim. Millimeter nC Min 4.06 A1 2.03 0.31 ° ...

Page 3

... Fig. 2. Extended Output Characteristics @ 25º 10V Volts DS Fig Normalized to I DS(on) vs. Junction Temperature V = 10V 180A D -50 - Degrees Centigrade J Fig. 6. Drain Current vs. Case Temperature 90 External Lead Current Limit -50 - Degrees Centigrade C IXTA180N10T IXTP180N10T 90A Value 90A D 100 125 150 175 100 125 150 175 ...

Page 4

... Amperes D Fig. 10. Gate Charge 50V 25A 10mA NanoCoulombs G Fig. 12. Forward-Bias Safe Operating Area 100µs 1ms R Limit on DS( ) 10ms DC, 100ms 1 175º 25ºC C Single Pulse 0 Volts DS IXTA180N10T IXTP180N10T 25ºC 150ºC 175 200 225 250 100 120 140 160 25µs 100 ...

Page 5

... I < 50A R = 10V 50V 25A, 50A Degrees Centigrade J Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance d(off 125º 10V 50V DS 25A < I < 50A 25A, 50A Ohms G IXTA180N10T IXTP180N10T = 25ºC = 125º 105 115 125 250 220 190 160 130 100 ...

Page 6

... IXYS reserves the right to change limits, test conditions, and dimensions. Fig. 19. Maximum Transient Thermal Impedance 0.01 Pulse Width - Seconds IXTA180N10T IXTP180N10T 0.1 1 IXYS REF: T_180N10T(61) 2-02-07-B 10 ...

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