IXTH160N10T IXYS, IXTH160N10T Datasheet - Page 3

• Manufacturer Part Number: IXTH160N10T
• Description: MOSFET N-CH 100V 160A TO-247
• Manufacturer: IXYS
• Series: TrenchMV™r

Specifications of IXTH160N10T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 160A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 132nC @ 10V
• Input Capacitance (ciss) @ Vds: 6600pF @ 25V
• Power - Max: 430W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.007 Ohms
• Drain-source Breakdown Voltage: 100 V
• Continuous Drain Current: 160 A
• Power Dissipation: 430 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 100
• Id(cont), Tc=25°c, (a): 160
• Rds(on), Max, Tj=25°c, (?): 0.0070
• Ciss, Typ, (pf): 6600
• Qg, Typ, (nc): 132
• Trr, Typ, (ns): 100
• Trr, Max, (ns): -
• Pd, (w): 430
• Rthjc, Max, (k/w): 0.35
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2006 IXYS CORPORATION All rights reserved
160
140
120
100
160
140
120
100
3.2
2.8
2.6
2.4
2.2
1.8
1.6
1.4
1.2
0.8
0.6
80
60
40
20
80
60
40
20
0
3
2
1
0
0
0
0
Fig. 5. R
V
GS
0.4
= 10V
15V - - - -
0.2
50
Fig. 3. Output Characteristics
Fig. 1. Output Characteristics
DS(on)
0.8
v s. Drain Current
100
0.4
Normalized to I
I
D
V
V
- Amperes
DS
1.2
@ 150ºC
DS
@ 25ºC
- Volts
- Volts
150
V
0.6
GS
V
GS
1.6
= 10V
= 10V
9V
8V
6V
5V
7V
8V
200
0.8
D
7V
6V
5V
= 80A Value
T
2
T
J
J
= 175ºC
= 25ºC
250
1
2.4
300
1.2
2.8
140
120
100
300
275
250
225
200
175
150
125
100
2.8
2.6
2.4
2.2
1.8
1.6
1.4
1.2
0.8
0.6
80
60
40
20
75
50
25
0
0
2
1
-50
-50
0
V
External Lead Current Limit for TO-263 (7-Lead)
External Lead Current Limit for TO-3P, TO-220, & TO-263
Fig. 4. R
Fig. 6. Drain Current vs. Case Temperature
GS
V
Fig. 2. Extended Output Characteristics
-25
-25
= 10V
GS
1
9V
8V
= 10V
DS(on)
0
0
vs. Junction Temperature
6V
7V
2
T
T
C
J
- Degrees Centigrade
- Degrees Centigrade
25
25
Normalized to I
3
V
DS
@ 25ºC
50
50
- Volts
4
75
75
I
D
IXTQ160N10T
IXTH160N10T
= 160A
5
100
D
100
= 160A Value
6
125
125
I
D
= 80A
150
150
7
175
175
8