IXTH160N10T IXYS, IXTH160N10T Datasheet - Page 5

• Manufacturer Part Number: IXTH160N10T
• Description: MOSFET N-CH 100V 160A TO-247
• Manufacturer: IXYS
• Series: TrenchMV™r

Specifications of IXTH160N10T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 160A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 132nC @ 10V
• Input Capacitance (ciss) @ Vds: 6600pF @ 25V
• Power - Max: 430W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.007 Ohms
• Drain-source Breakdown Voltage: 100 V
• Continuous Drain Current: 160 A
• Power Dissipation: 430 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 100
• Id(cont), Tc=25°c, (a): 160
• Rds(on), Max, Tj=25°c, (?): 0.0070
• Ciss, Typ, (pf): 6600
• Qg, Typ, (nc): 132
• Trr, Typ, (ns): 100
• Trr, Max, (ns): -
• Pd, (w): 430
• Rthjc, Max, (k/w): 0.35
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2006 IXYS CORPORATION All rights reserved
170
150
130
110
44
43
42
41
40
39
38
90
70
50
30
90
80
70
60
50
40
30
20
25
25
4
Switching Times vs. Gate Resistance
t
T
V
Switching Times vs. Drain Current
r
J
DS
35
I
6
= 125ºC, V
D
Rise Time vs. Junction Temperature
= 50V
= 25A
30
Fig. 17. Resistiv e Turn-off
Fig. 15. Resistiv e Turn-on
45
8
t
Fig. 13. Resistive Turn-on
d(on)
I
GS
T
D
I
55
T
J
D
= 50A
- - - -
J
10
R
= 125ºC
= 10V
35
- Amperes
- Degrees Centigrade
T
G
J
- Ohms
= 25ºC
65
12
T
J
= 125ºC
I
75
T
D
40
J
t
R
V
= 50A
14
f
= 25ºC
G
DS
= 5 Ω , V
85
= 50V
16
t
d(off)
95
I
45
GS
D
= 25A
= 10V
- - - -
R
V
V
18
G
GS
DS
105
= 5 Ω
= 50V
= 10V
20
50
115
65
60
55
50
45
40
35
30
80
77
74
71
68
65
62
59
56
53
50
47
44
125
140
130
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110
100
90
85
80
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70
65
60
55
50
45
40
35
30
90
80
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60
50
40
30
70
65
60
55
50
45
40
35
30
25
4
25
Switching Times vs. Junction Temperature
I
I
t
T
V
Switching Times v s. Gate Resistance
35
I
I
D
D
f
J
DS
D
D
R
V
V
= 125ºC, V
= 25A
= 50A
6
G
GS
DS
= 25A
= 50A
= 50V
= 5 Ω
45
= 50V
= 10V
Fig. 16. Resistive Turn-off
Fig. 18. Resistive Turn-off
T
30
t
8
J
d(off)
Rise Time vs. Drain Current
- Degrees Centigrade
Fig. 14. Resistive Turn-on
55
GS
- - - -
R
= 10V
10
65
G
I
- Ohms
D
35
- Amperes
75
12
t
R
V
f
G
DS
= 5 Ω , V
= 50V
85
I
IXYS REF: T_160N10T (5V) 11-16-06-A.xls
D
14
= 25A
t
d(off)
40
GS
95
IXTQ160N10T
16
= 10V
- - - -
105
I
D
18
T
115 125
= 50A
J
T
J
45
= 25ºC
= 125ºC
20
205
190
175
160
145
130
115
100
85
70
55
40
120
115
110
105
100
95
90
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50