MOSFET N-CH 75V 200A TO-247

IXTH200N075T

Manufacturer Part NumberIXTH200N075T
DescriptionMOSFET N-CH 75V 200A TO-247
ManufacturerIXYS
IXTH200N075T datasheet
 

Specifications of IXTH200N075T

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs5 mOhm @ 25A, 10VDrain To Source Voltage (vdss)75V
Current - Continuous Drain (id) @ 25° C200AVgs(th) (max) @ Id4V @ 250µA
Gate Charge (qg) @ Vgs160nC @ 10VInput Capacitance (ciss) @ Vds6800pF @ 25V
Power - Max430WMounting TypeThrough Hole
Package / CaseTO-247ConfigurationSingle
Transistor PolarityN-ChannelResistance Drain-source Rds (on)0.005 Ohms
Drain-source Breakdown Voltage75 VContinuous Drain Current200 A
Power Dissipation430 WMaximum Operating Temperature+ 175 C
Mounting StyleThrough HoleMinimum Operating Temperature- 55 C
Vdss, Max, (v)75Id(cont), Tc=25°c, (a)200
Rds(on), Max, Tj=25°c, (?)0.0050Ciss, Typ, (pf)6800
Qg, Typ, (nc)160Trr, Typ, (ns)50
Trr, Max, (ns)-Pd, (w)430
Rthjc, Max, (k/w)0.35Package StyleTO-247
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
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Trench Gate
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Symbol
Test Conditions
V
T
= 25°C to 175°C
DSS
J
V
T
= 25°C to 175°C; R
DGR
J
V
Transient
GSM
I
T
= 25°C
D25
C
I
Lead Current Limit, RMS
LRMS
I
T
= 25°C, pulse width limited by T
DM
C
I
T
= 25°C
AR
C
E
T
= 25°C
AS
C
≤ I
, di/dt ≤ 100 A/μs, V
dv/dt
I
S
DM
≤ 175°C, R
= 5 Ω
T
J
G
P
T
= 25°C
D
C
T
J
T
JM
T
stg
T
1.6 mm (0.062 in.) from case for 10 s
L
T
Plastic body for 10 seconds
SOLD
M
Mounting torque
d
Weight
TO-3P
TO-247
Symbol
Test Conditions
(T
= 25°C unless otherwise specified)
J
= 250 μA
BV
V
= 0 V, I
DSS
GS
D
= 250 μA
V
V
= V
, I
GS(th)
DS
GS
D
= ± 20 V, V
I
V
= 0 V
GSS
GS
DS
I
V
= V
DSS
DS
DSS
V
= 0 V
GS
R
V
= 10 V, I
= 25 A, Notes 1, 2
DS(on)
GS
D
© 2006 IXYS CORPORATION All rights reserved
Preliminary Technical Information
IXTH200N075T
IXTQ200N075T
Maximum Ratings
75
= 1 MΩ
75
GS
± 20
200
75
540
JM
25
750
≤ V
3
DD
DSS
430
-55 ... +175
175
-55 ... +175
300
260
1.13 / 10 Nm/lb.in.
5.5
6
Characteristic Values
Min.
Typ.
75
2.0
± 200
T
= 150°C
J
4.0
V
=
DSS
I
= 200
D25
5.0 mΩ Ω Ω Ω Ω
≤ ≤ ≤ ≤ ≤
R
DS(on)
TO-247 (IXTH)
V
V
V
A
A
G
D
A
S
A
mJ
TO-3P (IXTQ)
V/ns
W
°C
°C
G
°C
D
S
°C
°C
G = Gate
D = Drain
S = Source
TAB = Drain
g
Features
g
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Max.
Advantages
Easy to mount
V
Space savings
4.0
V
High power density
nA
μA
5
μA
250
5.0
75
V
A
(TAB)
(TAB)
DS99634 (11/06)

IXTH200N075T Summary of contents

  • Page 1

    ... GS(th ± GSS DSS DS DSS Notes 1, 2 DS(on © 2006 IXYS CORPORATION All rights reserved Preliminary Technical Information IXTH200N075T IXTQ200N075T Maximum Ratings MΩ ± 20 200 75 540 JM 25 750 ≤ DSS 430 -55 ... +175 175 -55 ... +175 300 260 1. Nm/lb.in. 5.5 6 Characteristic Values Min. ...

  • Page 2

    ... DSS D 43 0.25 0.21 Characteristic Values Min. Typ Kelvin test contact DS(on) The Technical Specifications 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTH200N075T IXTQ200N075T TO-247 AD Outline Max Terminals Gate 3 - Source nC Dim. Millimeter nC Min. Max. A 4.7 5.3 ...

  • Page 3

    ... 1.2 1.4 1.6 1 100A Value 175º 25ºC J 200 250 300 350 IXTH200N075T IXTQ200N075T Fig. 2. Extended Output Characteristics @ 25ºC 350 V = 10V GS 9V 300 8V 7V 250 200 6V 150 100 Volts DS Fig Normalized to I DS(on) vs. Junction Temperature 2.6 ...

  • Page 4

    ... V - Volts SD Fig. 11. Capacitance 10,000 1,000 MHz 100 Volts DS IXYS reserves the right to change limits, test conditions, and dimensions -40ºC J 25ºC 150ºC 5 25º 1.1 1.2 1.3 1.4 1.00 C iss 0.10 C oss C rss 0.01 ...

  • Page 5

    ... IXYS CORPORATION All rights reserved = 5 Ω 10V 38V 105 115 125 170 90 150 125º 130 75 70 110 25º IXTH200N075T IXTQ200N075T Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 25º Ω 10V 38V 125º Amperes D Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature Ω ...