STP12N65M5 STMicroelectronics, STP12N65M5 Datasheet

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STP12N65M5

Manufacturer Part Number
STP12N65M5
Description
MOSFET N-CH 650V 8.5A TO-220
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet

Specifications of STP12N65M5

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
430 mOhm @ 4.3A, 10V
Drain To Source Voltage (vdss)
650V
Current - Continuous Drain (id) @ 25° C
8.5A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
22nC @ 10V
Input Capacitance (ciss) @ Vds
900pF @ 100V
Power - Max
70W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Transistor Polarity
N Channel
Continuous Drain Current Id
8.5A
Drain Source Voltage Vds
650V
On Resistance Rds(on)
0.38ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Power
RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-10304-5

Available stocks

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Part Number
Manufacturer
Quantity
Price
Part Number:
STP12N65M5
Manufacturer:
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Features
1. Limited only by maximum temperature allowed
Application
Switching applications
Description
The devices are N-channel MDmesh
MOSFET based on an innovative proprietary
vertical process technology, which is combined
with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low on-
resistance, which is unmatched among silicon-
based Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
Table 1.
June 2010
STD12N65M5
STP12N65M5
STU12N65M5
STF12N65M5
STI12N65M5
Worldwide best R
Higher V
Excellent switching performance
Easy to drive
100% avalanche tested
Type
STD12N65M5
STP12N65M5
STU12N65M5
STF12N65M5
Order codes
STI12N65M5
N-channel 650 V, 0.39 Ω, 8.5 A MDmesh™ V Power MOSFET
DSS
Device summary
rating and high dv/dt capability
V
STD12N65M5, STF12N65M5, STI12N65M5
T
710 V
DSS
Jmax
DS(on)
@
< 0.43 Ω
R
* area
max
DS(on)
12N65M5
8.5 A
Marking
8.5 A
8.5 A
8.5 A
8.5 A
TM
I
D
(1)
V Power
Doc ID 15428 Rev 4
DPAK, I
70 W
25 W
70 W
70 W
70 W
P
TOT
STP12N65M5, STU12N65M5
Figure 1.
2
PAK, TO-220FP, TO-220, IPAK
Packages
TO-220FP
TO-220
DPAK
I²PAK
IPAK
I²PAK
IPAK
Internal schematic diagram
1 2
3
1
2
3
DPAK
1
Tape and reel
3
Packaging
Tube
Tube
Tube
Tube
TO-220FP
TO-220
www.st.com
1
1
2
1/18
2
3
3
18

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STP12N65M5 Summary of contents

Page 1

... Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. Table 1. Device summary Order codes STD12N65M5 STF12N65M5 STI12N65M5 STP12N65M5 STU12N65M5 June 2010 STP12N65M5, STU12N65M5 2 DPAK, I PAK, TO-220FP, TO-220, IPAK TOT 8 IPAK (1) 8 ...

Page 2

Contents Contents 1 Electrical ratings 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 3

STD/F/I/P/U12N65M5 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Drain-source voltage ( Gate-source voltage GS I Drain current (continuous Drain current (continuous (2) I Drain current (pulsed ...

Page 4

Electrical characteristics 2 Electrical characteristics ( °C unless otherwise specified) C Table 4. On /off states Symbol Drain-source V (BR)DSS breakdown voltage Zero gate voltage I DSS drain current (V Gate-body leakage I GSS current (V V Gate ...

Page 5

STD/F/I/P/U12N65M5 Table 6. Switching times Symbol t (v) Voltage delay time d t (v) Voltage rise time r t (i) Current fall time f t (off) Crossing time c Table 7. Source drain diode Symbol I Source-drain current SD (1) ...

Page 6

Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220 and I²PAK Tj=150°C 0.1 Tc=25°C Sinlge pulse 0.01 0 Figure 4. Safe operating area for TO-220FP Figure 6. Safe operating ...

Page 7

STD/F/I/P/U12N65M5 Figure 8. Output characteristics I D (A) V =10V Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on resistance V GS (V) ...

Page 8

Electrical characteristics Figure 14. Normalized gate threshold voltage vs temperature V GS(th) (norm) 1.10 1.00 0.90 0.80 0.70 -50 - Figure 16. Source-drain diode forward characteristics V SD (V) T =-50°C J 1.2 1.0 0.8 0.6 T ...

Page 9

STD/F/I/P/U12N65M5 3 Test circuits Figure 19. Switching times test circuit for resistive load Figure 21. Test circuit for inductive load switching and diode recovery times Figure 23. Unclamped inductive waveform Figure 20. Gate charge test circuit Figure 22. Unclamped inductive ...

Page 10

Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available ...

Page 11

STD/F/I/P/U12N65M5 Table 8. TO-220FP mechanical data Dim Dia Figure 25. TO-220FP drawing A Min. 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 ...

Page 12

Package mechanical data DIM (L1 12/18 TO-251 (IPAK) mechanical data mm. min. typ 2.20 0.90 0.64 5.20 0.45 0.48 6.00 6.40 2.28 4.40 16.10 9.00 ...

Page 13

STD/F/I/P/U12N65M5 DIM TO-252 (DPAK) mechanical data mm. min. typ 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 5.10 6.40 4.70 ...

Page 14

Package mechanical data 14/18 TO-220 type A mechanical data Dim Min A 4.40 b 0.61 b1 1.14 c 0.48 D 15. 2.40 e1 4.95 F 1.23 H1 6. 3.50 L20 L30 ...

Page 15

STD/F/I/P/U12N65M5 Doc ID 15428 Rev 4 Package mechanical data 15/18 ...

Page 16

Packaging mechanical data 5 Packaging mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE MECHANICAL DATA mm DIM. MIN. A0 6 1.5 D1 1.5 E 1.65 F 7.4 K0 2.55 P0 3.9 P1 7.9 P2 ...

Page 17

STD/F/I/P/U12N65M5 6 Revision history Table 9. Document revision history Date 24-Feb-2009 27-Feb-2009 21-Jan-2010 29-Jun-2010 Revision 1 First release 2 Corrected package information on first page 3 Document status promoted from preliminary data to datasheet Figure 15: Normalized on resistance vs ...

Page 18

... Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

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