IXFH16N50P IXYS, IXFH16N50P Datasheet
Home Discrete Semiconductor Products MOSFETs, GaNFETs - Single IXFH16N50P
Manufacturer Part Number
IXFH16N50P
Description
MOSFET N-CH 500V 16A TO-247
Specifications of IXFH16N50P
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
400 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
16A
Vgs(th) (max) @ Id
5.5V @ 2.5mA
Gate Charge (qg) @ Vgs
43nC @ 10V
Input Capacitance (ciss) @ Vds
2250pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-247
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.4 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
16 s
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
16 A
Power Dissipation
300000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
16
Rds(on), Max, Tj=25°c, (?)
0.4
Ciss, Typ, (pf)
2480
Qg, Typ, (nc)
43
Trr, Typ, (ns)
-
Trr, Max, (ns)
200
Pd, (w)
300
Rthjc, Max, (ºc/w)
0.42
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
PolarHV
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
D25
DM
AR
GSS
DSS
© 2006 IXYS All rights reserved
J
JM
stg
L
DSS
DGR
GS
GSM
AR
AS
D
SOLD
GS(th)
DS(on)
d
J
DSS
= 25° C, unless otherwise specified)
Continuous
Test Conditions
T
T
Transient
T
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s soldering
Mounting torque
TO-220
TO-263
TO-247
Test Conditions
V
V
V
V
V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
S
V
J
J
C
C
C
C
C
J
C
GS
DS
GS
DS
GS
GS
= 25° C to 150° C
= 25° C to 150° C; R
= 25° C
= 25° C, pulse width limited by T
= 25° C
= 25° C
= 25° C
≤ I
≤ 150° C, R
= 25° C
TM
= 0 V, I
= V
= ±30 V
= V
= 0 V
= 10 V, I
DM
, di/dt ≤ 100 A/µs, V
GS
DSS
HiPerFET
, I
D
D
DC
D
= 2.5 mA
= 250 µA
, V
G
= 0.5 I
= 10 Ω
DS
= 0
D25
(TO-247 & TO-220)
GS
= 1 MΩ
DD
T
J
≤ V
= 125° C
DSS
JM
IXFA 16N50P
IXFH 16N50P
IXFP 16N50P
,
500
Min.
3.0
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
Typ.
1.13/10 Nm/lb.in.
500
500
±40
750
300
150
300
260
5.5
±30
16
35
16
25
10
4
3
±100
250
Max.
5.5
400 mΩ
5
V/ns
mJ
mJ
nA
µA
°C
°C
°C
°C
°C
µA
W
V
V
V
V
A
A
A
V
V
g
g
g
TO-263 (IXTA)
TO-247 (IXFH)
TO-220 (IXTP)
Features
l
l
l
Advantages
l
l
l
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Easy to mount
Space savings
High power density
V
I
R
t
D25
rr
DS(on)
DSS
G
G = Gate
S = Source
D
G
S
D
G
S
≤ ≤ ≤ ≤ ≤ 400 mΩ Ω Ω Ω Ω
= 500
=
≤ ≤ ≤ ≤ ≤ 200
S
16
D = Drain
TAB = Drain
D (TAB)
DS99357E(03/06)
(TAB)
(TAB)
ns
A
V
Related parts for IXFH16N50P
IXFH16N50P Summary of contents
... GSS DSS DS DSS 0.5 I DS(on D25 Pulse test, t ≤ 300 µs, duty cycle d ≤ © 2006 IXYS All rights reserved IXFA 16N50P IXFH 16N50P IXFP 16N50P Maximum Ratings 500 = 1 MΩ 500 GS ±30 ± 750 ≤ DSS 300 -55 ... +150 150 -55 ... +150 ...
... L L1 ∅P Q Terminals Gate 2 - Drain Source Tab - Drain S IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 Characteristic Values (T = 25° C, unless otherwise specified) J Min. ...
... DS(on) Junction Temperature 3 10V GS 2.8 2.5 2 16A D 1.9 1.6 1.3 1 0.7 0.4 -50 - Degrees Centigrade J Fig. 5. Maximum Drain Current v s. Case Temperature -50 - Degrees Centigrade J © 2006 IXYS All rights reserved 2.8 2.6 2.4 2 1.6 1.4 1.2 1 0.8 75 100 125 150 ...
... Q - NanoCoulombs G Fig. 11. Forward-Bias Safe Operating Area 100 R Limit DS(on 150º 25º 100 V - Volts DS IXYS reserves the right to change limits, test conditions, and dimensions 0.3 10,000 1,000 100 1.00 25µs 0.10 100µs 1ms 10m 0.01 0.0001 1000 IXFA 16N50P IXFH 16N50P IXFP 16N50P Fig ...
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