IXTP102N15T IXYS, IXTP102N15T Datasheet

MOSFET N-CH 150V 102A TO-220

IXTP102N15T

Manufacturer Part Number
IXTP102N15T
Description
MOSFET N-CH 150V 102A TO-220
Manufacturer
IXYS
Datasheet

Specifications of IXTP102N15T

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
18 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
150V
Current - Continuous Drain (id) @ 25° C
102A
Vgs(th) (max) @ Id
5V @ 1mA
Gate Charge (qg) @ Vgs
87nC @ 10V
Input Capacitance (ciss) @ Vds
5220pF @ 25V
Power - Max
455W
Mounting Type
Through Hole
Package / Case
TO-220
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.018 Ohms
Drain-source Breakdown Voltage
150 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
102 A
Power Dissipation
455 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
150
Id(cont), Tc=25°c, (a)
102
Rds(on), Max, Tj=25°c, (?)
0.018
Ciss, Typ, (pf)
5220
Qg, Typ, (nc)
87
Trr, Typ, (ns)
97
Trr, Max, (ns)
-
Pd, (w)
455
Rthjc, Max, (k/w)
0.33
Package Style
TO-220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXTP102N15T
Manufacturer:
INFINEON
Quantity:
4 000
Trench Gate
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
TO-263 (IXTA)
Symbol
V
V
V
V
I
I
I
I
E
dV/dt
P
T
T
T
T
T
M
F
Weight
Symbol
(T
BV
V
I
I
R
© 2008 IXYS CORPORATION, All rights reserved
D25
LRMS
DM
A
GSS
DSS
J
JM
stg
L
SOLD
C
DSS
DGR
GSS
GSM
AS
D
GS(th)
DS(on)
d
J
DSS
= 25°C unless otherwise specified)
G
S
TO-220
Test Conditions
T
T
Continuous
Transient
T
Lead Current Limit, RMS
T
T
T
I
T
1.6mm (0.062 in.) from case for 10s
Plastic body for 10 seconds
Mounting Torque
Mounting Force
TO-263
TO-3P
TO-247
V
V
V
V
V
V
Test Conditions
S
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
GS
≤ I
= 25°C to 175°C
= 25°C to 175°C R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
= 0V, I
= V
= ± 20V, V
= V
= 0V
= 10V, I
DM
, V
(TAB)
GS
DSS
, I
DD
D
D
D
≤ V
= 250μA
= 1mA
= 0.5 • I
DS
DSS
TO-247 (IXTH)
= 0V
, T
G
(TO-220, TO-3P, TO-247)
(TO-263)
D25
D
GS
J
≤ 175°C
, Note 1
S
= 1MΩ
T
J
= 150°C
IXTQ102N15T
IXTA102N15T
IXTH102N15T
IXTP102N15T
JM
(TAB)
10..65/2.2..14.6
TO-220 (IXTP)
Min.
-55 ... +175
-55 ... +175
Characteristic Values
150
3.0
Maximum Ratings
1.13 / 10
± 20
± 30
G
150
150
102
300
750
455
175
300
260
Typ.
2.5
3.0
5.5
6.0
75
51
10
D
S
± 200 nA
250 μA
Nmlb.in.
5.0
Max.
18 mΩ
5 μA
N/lb.
V/ns
mJ
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
A
V
V
g
g
g
g
(TAB)
TO-3P (IXTQ)
V
I
R
G = Gate
S = Source
Features
Advantages
Applications
D25
Avalanche rated
International standard packages
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor drives
Uninterruptible power supplies
High speed power switching
applications
Easy to mount
Space savings
High power density
DS(on)
DSS
G
D
= 150V
= 102A
S
≤ ≤ ≤ ≤ ≤
D
TAB = Drain
18mΩ Ω Ω Ω Ω
= Drain
DS99661B(10/08)
(TAB)

Related parts for IXTP102N15T

IXTP102N15T Summary of contents

Page 1

... GSS DSS DS DSS 10V 0.5 • I DS(on D25 © 2008 IXYS CORPORATION, All rights reserved IXTA102N15T IXTH102N15T IXTP102N15T IXTQ102N15T TO-220 (IXTP) D (TAB Maximum Ratings 150 = 1MΩ 150 GS ± 20 ± 30 102 75 300 JM 51 750 ≤ 175° 455 -55 ... +175 175 -55 ...

Page 2

... I = 25A 23 DSS D 31 0.50 0.25 Characteristic Values Min. Typ 8.4 409 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTA102N15T IXTH102N15T IXTP102N15T IXTQ102N15T Max 0.33 °C/W °C/W °C/W Max. 102 A 400 A 1 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 6,534,343 ...

Page 3

... TO-263 (IXTA) Outline TO-220 (IXTP) Outline Pins Gate 3 - Source © 2008 IXYS CORPORATION, All rights reserved TO-247 (IXTH) Outline TO-3P (IXTQ) Outline 2 - Drain 4 - Drain IXTA102N15T IXTH102N15T IXTP102N15T IXTQ102N15T ∅ Terminals Gate 2 - Drain 3 - Source Tab - Drain Dim. Millimeter Inches Min. Max. Min. ...

Page 4

... Value 175º 25ºC J 160 200 240 280 IXTA102N15T IXTH102N15T IXTP102N15T IXTQ102N15T Fig. 2. Extended Output Characteristics @ 25º 15V GS 10V Volts DS Fig Normalized to I DS(on) vs. Junction Temperature 3 10V GS 2.6 2.2 ...

Page 5

... IXYS CORPORATION, All rights reserved 120 110 100 6.0 6.5 7.0 7 25ºC J 0.9 1.0 1.1 1.2 1.3 1000.0 C iss 100.0 C oss 10.0 C rss 1.0 0 IXTA102N15T IXTH102N15T IXTP102N15T IXTQ102N15T Fig. 8. Transconductance 40ºC J 25ºC 150º 100 I - Amperes D Fig. 10. Gate Charge 75V 51A 10mA ...

Page 6

... 280 42 240 125ºC J 200 34 160 30 120 25º 100 105 IXTA102N15T IXTH102N15T IXTP102N15T IXTQ102N15T Fig. 14. Resistive Turn-on Rise Time vs. Drain Current R = 3.3Ω 10V 75V T = 125º 25º Amperes D Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature d(off 3.3Ω 10V ...

Page 7

... IXYS CORPORATION, All rights reserved Fig. 19. Maximum Transient Thermal Impedance 0.01 Pulse Width - Seconds IXTA102N15T IXTH102N15T IXTP102N15T IXTQ102N15T 0.1 1 IXYS REF: F_102N15T(6E)90-30-08 10 ...

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