MOSFET N-CH 200V 56A TO-220AB

IRFB260NPBF

Manufacturer Part NumberIRFB260NPBF
DescriptionMOSFET N-CH 200V 56A TO-220AB
ManufacturerInternational Rectifier
SeriesHEXFET®
TypePower MOSFET
IRFB260NPBF datasheets
 


Specifications of IRFB260NPBF

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs40 mOhm @ 34A, 10VDrain To Source Voltage (vdss)200V
Current - Continuous Drain (id) @ 25° C56AVgs(th) (max) @ Id4V @ 250µA
Gate Charge (qg) @ Vgs220nC @ 10VInput Capacitance (ciss) @ Vds4220pF @ 25V
Power - Max380WMounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)Channel TypeN
Current, Drain56 AGate Charge, Total150 nC
Package TypeTO-220ABPolarizationN-Channel
Power Dissipation380 WResistance, Drain To Source On0.04 Ohm
Resistance, Thermal, Junction To Case0.4 °C/WTemperature, Operating, Maximum+175 °C
Temperature, Operating, Minimum-55 °CTime, Turn-off Delay52 ns
Time, Turn-on Delay17 nsTransconductance, Forward29 S
Voltage, Breakdown, Drain To Source200 VVoltage, Drain To Source200 V
Voltage, Forward, Diode1.3 VVoltage, Gate To Source±20 V
Transistor PolarityN-ChannelDrain-source Breakdown Voltage200 V
Gate-source Breakdown Voltage20 VContinuous Drain Current56 A
Mounting StyleThrough HoleGate Charge Qg150 nC
Number Of Elements1PolarityN
Channel ModeEnhancementDrain-source On-res0.04Ohm
Drain-source On-volt200VGate-source Voltage (max)±20V
Operating Temp Range-55C to 175COperating Temperature ClassificationMilitary
MountingThrough HolePin Count3 +Tab
Lead Free Status / RoHS StatusLead free / RoHS CompliantOther names*IRFB260NPBF
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Applications
High frequency DC-DC converters
l
Lead-Free
l
Benefits
Low Gate-to-Drain Charge to Reduce Switching Losses
l
Fully Characterized Capacitance Including Effective C
l
Simplify Design, (See App. Note AN1001)
Fully Characterized Avalanche Voltage and Current
l
Absolute Maximum Ratings
Parameter
I
@ T
= 25°C
Continuous Drain Current, V
D
C
I
@ T
= 100°C
Continuous Drain Current, V
D
C
I
Pulsed Drain Current 
DM
P
@T
= 25°C
Power Dissipation
D
C
Linear Derating Factor
V
Gate-to-Source Voltage
GS
dv/dt
Peak Diode Recovery dv/dt ƒ
T
Operating Junction and
J
T
Storage Temperature Range
STG
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
Thermal Resistance
Parameter
R
Junction-to-Case
θJC
R
Case-to-Sink, Flat, Greased Surface
θCS
R
Junction-to-Ambient
θJA
Notes 
through … are on page 8
www.irf.com
SMPS MOSFET
IRFB260NPbF
HEXFET
V
DSS
200V
OSS
@ 10V
GS
@ 10V
GS
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typ.
–––
0.50
–––
PD - 95473
®
Power MOSFET
R
max
I
DS(on)
D
0.040Ω
56A
to
TO-220AB
Max.
Units
56
40
A
220
380
W
2.5
W/°C
± 20
V
10
V/ns
-55 to + 175
°C
Max.
Units
0.40
–––
°C/W
62
1

IRFB260NPBF Summary of contents

  • Page 1

    ... Thermal Resistance Parameter R Junction-to-Case θJC R Case-to-Sink, Flat, Greased Surface θCS R Junction-to-Ambient θJA Notes  through … are on page 8 www.irf.com SMPS MOSFET IRFB260NPbF HEXFET V DSS 200V OSS @ 10V GS @ 10V GS 300 (1.6mm from case ) 10 lbf•in (1.1N•m) Typ. ––– 0.50 – ...

  • Page 2

    ... IRFB260NPbF Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient ∆V /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Dynamic @ T = 25°C (unless otherwise specified) ...

  • Page 3

    ... Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000.00 100. 25°C 10. 15V 20µs PULSE WIDTH 1.00 3.0 5.0 7.0 9 Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com IRFB260NPbF 1000 TOP 100 BOTTOM 4.5V 10 4.5V 1 0.1 10 100 0.1 Fig 2. Typical Output Characteristics 3 3 175°C 2 ...

  • Page 4

    ... IRFB260NPbF 100000 0V MHZ C iss = rss = oss = 10000 Ciss 1000 Coss Crss 100 Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000.00 100. 175°C 10. 25°C 1.00 0.10 0.0 0.5 1 Source-toDrain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage SHORTED 100 1000 0 Fig 6. Typical Gate Charge Vs. ...

  • Page 5

    ... D = 0.50 0.1 0.20 0.10 0.05 SINGLE PULSE 0.02 (THERMAL RESPONSE) 0.01 0.01 0.001 0.00001 0.0001 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com IRFB260NPbF Fig 10a. Switching Time Test Circuit V DS 90% 150 175 ° 10 d(on) Fig 10b. Switching Time Waveforms 0.001 ...

  • Page 6

    ... IRFB260NPbF D.U 20V 0.01 Ω Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic Gate Charge Waveform 6 850 15V DRIVER 680 + V DD 510 - A 340 170 Starting T , Junction Temperature Fig 12c. Maximum Avalanche Energy Fig 13b. Gate Charge Test Circuit ...

  • Page 7

    ... D.U.T + ‚ -  Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery Current D.U.T. V Waveform DS Re-Applied Voltage Inductor Curent Fig 14. For N-Channel HEXFET www.irf.com IRFB260NPbF + • • ƒ • - „ • • • • P.W. Period D = Period Body Diode Forward Current di/dt ...

  • Page 8

    ... IRFB260NPbF 2.87 (.113) 2.62 (.103) 15.24 (.600) 14.84 (.584) 14.09 (.555) 13.47 (.530) 1.40 (.055) 3X 1.15 (.045) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH E XAMPLE : 1010 L OT CODE 1789 19, 1997 LINE "C" Note: "P" in assembly line position indicates " ...

  • Page 9

    Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...