IRFB260NPBF International Rectifier, IRFB260NPBF Datasheet
IRFB260NPBF
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IRFB260NPBF Summary of contents
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... Thermal Resistance Parameter R Junction-to-Case θJC R Case-to-Sink, Flat, Greased Surface θCS R Junction-to-Ambient θJA Notes through are on page 8 www.irf.com SMPS MOSFET IRFB260NPbF HEXFET V DSS 200V OSS @ 10V GS @ 10V GS 300 (1.6mm from case ) 10 lbf•in (1.1N•m) Typ. ––– 0.50 – ...
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... IRFB260NPbF Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient ∆V /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Dynamic @ T = 25°C (unless otherwise specified) ...
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... Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000.00 100. 25°C 10. 15V 20µs PULSE WIDTH 1.00 3.0 5.0 7.0 9 Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com IRFB260NPbF 1000 TOP 100 BOTTOM 4.5V 10 4.5V 1 0.1 10 100 0.1 Fig 2. Typical Output Characteristics 3 3 175°C 2 ...
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... IRFB260NPbF 100000 0V MHZ C iss = rss = oss = 10000 Ciss 1000 Coss Crss 100 Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000.00 100. 175°C 10. 25°C 1.00 0.10 0.0 0.5 1 Source-toDrain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage SHORTED 100 1000 0 Fig 6. Typical Gate Charge Vs. ...
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... D = 0.50 0.1 0.20 0.10 0.05 SINGLE PULSE 0.02 (THERMAL RESPONSE) 0.01 0.01 0.001 0.00001 0.0001 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com IRFB260NPbF Fig 10a. Switching Time Test Circuit V DS 90% 150 175 ° 10 d(on) Fig 10b. Switching Time Waveforms 0.001 ...
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... IRFB260NPbF D.U 20V 0.01 Ω Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic Gate Charge Waveform 6 850 15V DRIVER 680 + V DD 510 - A 340 170 Starting T , Junction Temperature Fig 12c. Maximum Avalanche Energy Fig 13b. Gate Charge Test Circuit ...
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... D.U.T + - Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery Current D.U.T. V Waveform DS Re-Applied Voltage Inductor Curent Fig 14. For N-Channel HEXFET www.irf.com IRFB260NPbF + • • • - • • • • P.W. Period D = Period Body Diode Forward Current di/dt ...
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... IRFB260NPbF 2.87 (.113) 2.62 (.103) 15.24 (.600) 14.84 (.584) 14.09 (.555) 13.47 (.530) 1.40 (.055) 3X 1.15 (.045) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH E XAMPLE : 1010 L OT CODE 1789 19, 1997 LINE "C" Note: "P" in assembly line position indicates " ...
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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...