IRFB260NPBF International Rectifier, IRFB260NPBF Datasheet - Page 5

• Manufacturer Part Number: IRFB260NPBF
• Description: MOSFET N-CH 200V 56A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRFB260NPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 40 mOhm @ 34A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 56A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 220nC @ 10V
• Input Capacitance (ciss) @ Vds: 4220pF @ 25V
• Power - Max: 380W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Channel Type: N
• Current, Drain: 56 A
• Gate Charge, Total: 150 nC
• Package Type: TO-220AB
• Polarization: N-Channel
• Power Dissipation: 380 W
• Resistance, Drain To Source On: 0.04 Ohm
• Resistance, Thermal, Junction To Case: 0.4 °C/W
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 52 ns
• Time, Turn-on Delay: 17 ns
• Transconductance, Forward: 29 S
• Voltage, Breakdown, Drain To Source: 200 V
• Voltage, Drain To Source: 200 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±20 V
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 56 A
• Mounting Style: Through Hole
• Gate Charge Qg: 150 nC
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.04Ohm
• Drain-source On-volt: 200V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRFB260NPBF

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0.001
0.01
60
50
40
30
20
10
0.1
0.00001
0
1
25
Fig 9. Maximum Drain Current Vs.
D = 0.50
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
0.20
0.10
0.05
0.02
0.01
50
T , Case Temperature
Case Temperature
C
75
(THERMAL RESPONSE)
0.0001
SINGLE PULSE
100
125
( C)
°
150
t , Rectangular Pulse Duration (sec)
1
0.001
175
Fig 10b. Switching Time Waveforms
Fig 10a. Switching Time Test Circuit
V
90%
10%
V
DS
GS
0.01
IRFB260NPbF
t
d(on)
1. Duty factor D =
2. Peak T
Notes:
t
r
≤ 0.1 %
J
≤ 1
= P
DM
x Z
t / t
1
0.1
thJC
P
2
t
d(off)
DM
+ T
C
t
1
t
f
t
2
+
-
5
1