IRFB260NPBF International Rectifier, IRFB260NPBF Datasheet - Page 6

• Manufacturer Part Number: IRFB260NPBF
• Description: MOSFET N-CH 200V 56A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRFB260NPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 40 mOhm @ 34A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 56A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 220nC @ 10V
• Input Capacitance (ciss) @ Vds: 4220pF @ 25V
• Power - Max: 380W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Channel Type: N
• Current, Drain: 56 A
• Gate Charge, Total: 150 nC
• Package Type: TO-220AB
• Polarization: N-Channel
• Power Dissipation: 380 W
• Resistance, Drain To Source On: 0.04 Ohm
• Resistance, Thermal, Junction To Case: 0.4 °C/W
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 52 ns
• Time, Turn-on Delay: 17 ns
• Transconductance, Forward: 29 S
• Voltage, Breakdown, Drain To Source: 200 V
• Voltage, Drain To Source: 200 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±20 V
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 56 A
• Mounting Style: Through Hole
• Gate Charge Qg: 150 nC
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.04Ohm
• Drain-source On-volt: 200V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRFB260NPBF

IRFB260NPbF
Fig 12a. Unclamped Inductive Test Circuit
6
Fig 12b. Unclamped Inductive Waveforms
Fig 13a. Basic Gate Charge Waveform
I
AS
V
R G
20V
G
V DS
Q
t p
GS
t p
I AS
D.U.T
0.01 Ω
L
Charge
Q
Q
V
GD
G
(BR)DSS
15V
DRIVER
+
-
V DD
A
850
680
510
340
170
0
25
Fig 12c. Maximum Avalanche Energy
Starting T , Junction Temperature
Fig 13b. Gate Charge Test Circuit
50
12V
V
GS
J
Vs. Drain Current
Same Type as D.U.T.
75
Current Regulator
.2µF
50KΩ
3mA
Current Sampling Resistors
100
.3µF
I
G
125
TOP
BOTTOM
www.irf.com
D.U.T.
I
D
150
+
-
V
( C)
DS
°
I D
14A
24A
34A
175