IRFB260NPBF International Rectifier, IRFB260NPBF Datasheet - Page 8

• Manufacturer Part Number: IRFB260NPBF
• Description: MOSFET N-CH 200V 56A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRFB260NPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 40 mOhm @ 34A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 56A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 220nC @ 10V
• Input Capacitance (ciss) @ Vds: 4220pF @ 25V
• Power - Max: 380W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Channel Type: N
• Current, Drain: 56 A
• Gate Charge, Total: 150 nC
• Package Type: TO-220AB
• Polarization: N-Channel
• Power Dissipation: 380 W
• Resistance, Drain To Source On: 0.04 Ohm
• Resistance, Thermal, Junction To Case: 0.4 °C/W
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 52 ns
• Time, Turn-on Delay: 17 ns
• Transconductance, Forward: 29 S
• Voltage, Breakdown, Drain To Source: 200 V
• Voltage, Drain To Source: 200 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±20 V
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 56 A
• Mounting Style: Through Hole
• Gate Charge Qg: 150 nC
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.04Ohm
• Drain-source On-volt: 200V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRFB260NPBF

IRFB260NPbF
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Notes:
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: [phone]
8
Repetitive rating; pulse width limited by
I
R
T
max. junction temperature.
Starting T
SD
J
G
≤ 175°C
≤ 34, di/dt ≤ 480A/µs, V
= 25Ω, I
J
= 25°C, L = 0.78mH
AS
= 34A.
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
2 CONTROLLING DIMENSION : INCH
14.09 (.555)
13.47 (.530)
15.24 (.600)
14.84 (.584)
E XAMPLE :
2.87 (.113)
2.62 (.103)
3X
2.54 (.100)
DD
1.40 (.055)
1.15 (.045)
2X
≤ V
T H IS IS AN IR F 1010
L OT CODE 1789
AS S E MB LE D ON WW 19, 1997
IN T H E AS S E MB L Y LINE "C"
Note: "P" in assembly line
position indicates "Lead-Free"
(BR)DSS
10.54 (.415)
10.29 (.405)
1
This product has been designed and qualified for the Industrial market.
2
,
3
4
3X
0.36 (.014)
6.47 (.255)
6.10 (.240)
0.93 (.037)
0.69 (.027)
1.15 (.045)
4.06 (.160)
3.55 (.140)
„
…
MIN
3.78 (.149)
3.54 (.139)
Pulse width ≤ 300µs; duty cycle ≤ 2%.
C
time as C
Data and specifications subject to change without notice.
Visit us at www.irf.com for sales contact information.7/04
oss
M
- A -
Qualification Standards can be found on IR’s Web site.
B A M
eff. is a fixed capacitance that gives the same charging
INT E R NAT IONAL
3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
oss
R E CT IF IE R
AS S E MB L Y
L OT CODE
L OGO
while V
4.69 (.185)
4.20 (.165)
DS
is rising from 0 to 80% V
- B -
1.32 (.052)
1.22 (.048)
2.92 (.115)
2.64 (.104)
3X
HEXFET
1- GATE
2- DRAIN
3- SOURCE
4- DRAIN
0.55 (.022)
0.46 (.018)
LEAD ASSIGNMENTS
LEAD ASSIGNMENTS
1 - GATE
2 - DRAIN
3 - SOURCE
4 - DRAIN
DAT E CODE
YE AR 7 = 1997
WE E K 19
L INE C
TAC Fax: [phone]
PAR T NU MB E R
IGBTs, CoPACK
1- GATE
2- COLLECTOR
3- EMITTER
4- COLLECTOR
DSS
www.irf.com