MOSFET N-CH 200V 43A TO-220AB

IRFB38N20DPBF

Manufacturer Part NumberIRFB38N20DPBF
DescriptionMOSFET N-CH 200V 43A TO-220AB
ManufacturerInternational Rectifier
SeriesHEXFET®
IRFB38N20DPBF datasheets
 


Specifications of IRFB38N20DPBF

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs54 mOhm @ 26A, 10VDrain To Source Voltage (vdss)200V
Current - Continuous Drain (id) @ 25° C43AVgs(th) (max) @ Id5V @ 250µA
Gate Charge (qg) @ Vgs91nC @ 10VInput Capacitance (ciss) @ Vds2900pF @ 25V
Power - Max3.8WMounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)Channel TypeN
Current, Drain43 AGate Charge, Total60 nC
Package TypeTO-220ABPolarizationN-Channel
Power Dissipation300 WResistance, Drain To Source On0.054 Ohm
Resistance, Thermal, Junction To Case0.47 °C/WTemperature, Operating, Maximum+175 °C
Temperature, Operating, Minimum-55 °CTime, Turn-off Delay29 ns
Time, Turn-on Delay16 nsTransconductance, Forward17 S
Voltage, Breakdown, Drain To Source200 VVoltage, Drain To Source200 V
Voltage, Forward, Diode1.5 VVoltage, Gate To Source±30 V
Transistor PolarityN-ChannelDrain-source Breakdown Voltage200 V
Gate-source Breakdown Voltage30 VContinuous Drain Current44 A
Mounting StyleThrough HoleGate Charge Qg60 nC
Lead Free Status / RoHS StatusLead free / RoHS CompliantOther names*IRFB38N20DPBF
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Applications
High frequency DC-DC converters
l
Plasma Display Panel
l
Benefits
Low Gate-to-Drain Charge to
l
Reduce Switching Losses
Fully Characterized Capacitance
l
Including Effective C
OSS
Design, (See App. Note AN1001)
Fully Characterized Avalanche Voltage
l
and Current
Lead-Free
l
Absolute Maximum Ratings
Parameter
I
@ T
= 25°C
Continuous Drain Current, V
D
C
I
@ T
= 100°C
Continuous Drain Current, V
D
C
I
Pulsed Drain Current 
DM
Power Dissipation ‡
P
@T
= 25°C
D
A
Power Dissipation ‡
P
@T
= 25°C
D
C
Linear Derating Factor ‡
V
Gate-to-Source Voltage
GS
Peak Diode Recovery dv/dt ƒ
dv/dt
T
Operating Junction and
J
T
Storage Temperature Range
STG
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw†
Thermal Resistance
Parameter
R
Junction-to-Case
JC
R
Case-to-Sink, Flat, Greased Surface †
CS
R
Junction-to-Ambient†
JA
R
Junction-to-Ambient‡
JA
2
* R
(end of life) for D
Pak and TO-262 = 0.50°C/W. This is the maximum measured value after 1000 temperature
JC
cycles from -55 to 150°C and is accounted for by the physical wearout of the die attach medium.
Notes  through ‡
are on page 11
www.irf.com
Key Parameters
V
DS
V
min.
DS (Avalanche)
R
max @ 10V
DS(ON)
T
max
J
to Simplify
TO-220AB
IRFB38N20DPbF
@ 10V ‡
GS
@ 10V ‡
GS
PD - 97001C
IRFB38N20DPbF
IRFS38N20DPbF
IRFSL38N20DPbF
HEXFET Power MOSFET
200
V
260
V
m
54
175
°C
2
D
Pak
TO-262
IRFS38N20DPbF
IRFSL38N20DPbF
Max.
Units
43*
30*
A
180
3.8
W
300*
2.0*
W/°C
± 30
V
9.5
V/ns
-55 to + 175
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typ.
Max.
Units
–––
0.47*
0.50
–––
°C/W
–––
62
–––
40
09/22/10
1

IRFB38N20DPBF Summary of contents

  • Page 1

    ... Notes  through ‡ are on page 11 www.irf.com Key Parameters min. DS (Avalanche) R max @ 10V DS(ON) T max J to Simplify TO-220AB IRFB38N20DPbF @ 10V ‡ 10V ‡ 97001C IRFB38N20DPbF IRFS38N20DPbF IRFSL38N20DPbF HEXFET Power MOSFET 200 V 260 175 ° Pak TO-262 IRFS38N20DPbF IRFSL38N20DPbF Max. Units 43* 30* A 180 3 ...

  • Page 2

    IRFB/S/SL38N20DPbF Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS ...

  • Page 3

    VGS TOP 15V 12V 10V 8.0V 7.0V 100 6.0V 5.5V BOTTOM 5. 300µs PULSE WIDTH Tj = 25°C 0.1 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000.00 100.00 10. ...

  • Page 4

    IRFB/S/SL38N20DPbF 100000 0V, C iss = rss = oss = 10000 Ciss 1000 Coss 100 Crss ...

  • Page 5

    Case Temperature (°C) Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.1 0.10 0.05 SINGLE PULSE 0.02 (THERMAL ...

  • Page 6

    IRFB/S/SL38N20DPbF D.U 20V 0. Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Charge Fig ...

  • Page 7

    D.U.T + ‚ -  Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery Current D.U.T. V Waveform DS Re-Applied Voltage Inductor Curent Fig 14. For N-Channel HEXFET www.irf.com + ƒ - „ P.W. Period D = ...

  • Page 8

    IRFB/S/SL38N20DPbF E XAMPLE : T HIS IS AN IRF 1010 LOT CODE 1789 19, 1997 LINE "C" Note: "P" inas s embly line pos ...

  • Page 9

    T HIS IS AN IRF530S WITH LOT CODE 8024 AS S EMBLED ON WW 02, 2000 IN THE AS S EMBLY LINE "L" OR Notes: 1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/auto/ 2. ...

  • Page 10

    IRFB/S/SL38N20DPbF TO-262 Package Outline TO-262 Part Marking Information E XAMPLE : THIS IS AN IRL3103L LOT CODE 1789 AS SEMBLED ON WW 19, 1997 ASS EMBLY LINE "C" OR Notes: 1. For an Automotive Qualified version of ...

  • Page 11

    TRR FEED DIRECTION TRL FEED DIRECTION NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. Notes:  Repetitive rating; pulse width limited by max. junction temperature. ...