IRFB38N20DPBF International Rectifier, IRFB38N20DPBF Datasheet

IRFB38N20DPBF

Manufacturer Part Number

IRFB38N20DPBF

Description

MOSFET N-CH 200V 43A TO-220AB

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheets

1.IRFB38N20DPBF.pdf (11 pages)

2.IRFB38N20DPBF.pdf (3 pages)

Specifications of IRFB38N20DPBF

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

54 mOhm @ 26A, 10V

Drain To Source Voltage (vdss)

200V

Current - Continuous Drain (id) @ 25° C

43A

Vgs(th) (max) @ Id

5V @ 250µA

Gate Charge (qg) @ Vgs

91nC @ 10V

Input Capacitance (ciss) @ Vds

2900pF @ 25V

Power - Max

3.8W

Mounting Type

Through Hole

Package / Case

TO-220-3 (Straight Leads)

Channel Type

Current, Drain

43 A

Gate Charge, Total

60 nC

Package Type

TO-220AB

Polarization

N-Channel

Power Dissipation

300 W

Resistance, Drain To Source On

0.054 Ohm

Resistance, Thermal, Junction To Case

0.47 °C/W

Temperature, Operating, Maximum

+175 °C

Temperature, Operating, Minimum

-55 °C

Time, Turn-off Delay

29 ns

Time, Turn-on Delay

16 ns

Transconductance, Forward

17 S

Voltage, Breakdown, Drain To Source

200 V

Voltage, Drain To Source

200 V

Voltage, Forward, Diode

1.5 V

Voltage, Gate To Source

±30 V

Transistor Polarity

N-Channel

Drain-source Breakdown Voltage

200 V

Gate-source Breakdown Voltage

30 V

Continuous Drain Current

44 A

Mounting Style

Through Hole

Gate Charge Qg

60 nC

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

*IRFB38N20DPBF

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Current page: 1 of 11
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Notes through ‡

* R

www.irf.com

Applications

Absolute Maximum Ratings

Thermal Resistance

Benefits

dv/dt

STG

cycles from -55 to 150°C and is accounted for by the physical wearout of the die attach medium.

@ T

and Current

Low Gate-to-Drain Charge to

Reduce Switching Losses

Fully Characterized Capacitance

Including Effective C

Design, (See App. Note AN1001)

Fully Characterized Avalanche Voltage

Lead-Free

High frequency DC-DC converters

Plasma Display Panel

(end of life) for D

= 25°C

= 100°C

= 25°C

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation ‡

Linear Derating Factor ‡

Gate-to-Source Voltage

Peak Diode Recovery dv/dt ƒ

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torqe, 6-32 or M3 screw†

Junction-to-Case

Case-to-Sink, Flat, Greased Surface †

Junction-to-Ambient†

Junction-to-Ambient‡

are on page 11

Pak and TO-262 = 0.50°C/W. This is the maximum measured value after 1000 temperature

OSS

Parameter

to Simplify

@ 10V ‡

DS (Avalanche)

DS(ON)

max

IRFB38N20DPbF

max @ 10V

TO-220AB

min.

Key Parameters

300 (1.6mm from case )

Typ.

0.50

–––

HEXFET Power MOSFET

-55 to + 175

10 lbf•in (1.1N•m)

IRFS38N20DPbF

Max.

300*

180

± 30

2.0*

3.8

9.5

43*

30*

IRFSL38N20DPbF

IRFB38N20DPbF

IRFS38N20DPbF

Pak

200

260

175

Max.

0.47*

–––

IRFSL38N20DPbF

PD - 97001C

TO-262

Units

09/22/10

Units

W/°C

°C

°C/W

V/ns

°C

Related parts for IRFB38N20DPBF

IRFB38N20DPBF Summary of contents

Page 1

... Notes through ‡ are on page 11 www.irf.com Key Parameters min. DS (Avalanche) R max @ 10V DS(ON) T max J to Simplify TO-220AB IRFB38N20DPbF @ 10V ‡ 10V ‡ 97001C IRFB38N20DPbF IRFS38N20DPbF IRFSL38N20DPbF HEXFET Power MOSFET 200 V 260 175 ° Pak TO-262 IRFS38N20DPbF IRFSL38N20DPbF Max. Units 43* 30* A 180 3 ...

Page 2

IRFB/S/SL38N20DPbF Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS ...

Page 3

VGS TOP 15V 12V 10V 8.0V 7.0V 100 6.0V 5.5V BOTTOM 5. 300µs PULSE WIDTH Tj = 25°C 0.1 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000.00 100.00 10. ...

Page 4

IRFB/S/SL38N20DPbF 100000 0V, C iss = rss = oss = 10000 Ciss 1000 Coss 100 Crss ...

Page 5

Case Temperature (°C) Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.1 0.10 0.05 SINGLE PULSE 0.02 (THERMAL ...

Page 6

IRFB/S/SL38N20DPbF D.U 20V 0. Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Charge Fig ...

Page 7

D.U.T + ‚ - Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery Current D.U.T. V Waveform DS Re-Applied Voltage Inductor Curent Fig 14. For N-Channel HEXFET www.irf.com + ƒ - „ P.W. Period D = ...

Page 8

IRFB/S/SL38N20DPbF E XAMPLE : T HIS IS AN IRF 1010 LOT CODE 1789 19, 1997 LINE "C" Note: "P" inas s embly line pos ...

Page 9

T HIS IS AN IRF530S WITH LOT CODE 8024 AS S EMBLED ON WW 02, 2000 IN THE AS S EMBLY LINE "L" OR Notes: 1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/auto/ 2. ...

Page 10

IRFB/S/SL38N20DPbF TO-262 Package Outline TO-262 Part Marking Information E XAMPLE : THIS IS AN IRL3103L LOT CODE 1789 AS SEMBLED ON WW 19, 1997 ASS EMBLY LINE "C" OR Notes: 1. For an Automotive Qualified version of ...

Page 11

TRR FEED DIRECTION TRL FEED DIRECTION NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. Notes: Repetitive rating; pulse width limited by max. junction temperature. ...

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