IRFB38N20DPBF International Rectifier, IRFB38N20DPBF Datasheet

IRFB38N20DPBF

Manufacturer Part Number

IRFB38N20DPBF

Description

MOSFET N-CH 200V 43A TO-220AB

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheets

1.IRFB38N20DPBF.pdf (11 pages)

2.IRFB38N20DPBF.pdf (3 pages)

Specifications of IRFB38N20DPBF

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

54 mOhm @ 26A, 10V

Drain To Source Voltage (vdss)

200V

Current - Continuous Drain (id) @ 25° C

43A

Vgs(th) (max) @ Id

5V @ 250µA

Gate Charge (qg) @ Vgs

91nC @ 10V

Input Capacitance (ciss) @ Vds

2900pF @ 25V

Power - Max

3.8W

Mounting Type

Through Hole

Package / Case

TO-220-3 (Straight Leads)

Channel Type

Current, Drain

43 A

Gate Charge, Total

60 nC

Package Type

TO-220AB

Polarization

N-Channel

Power Dissipation

300 W

Resistance, Drain To Source On

0.054 Ohm

Resistance, Thermal, Junction To Case

0.47 °C/W

Temperature, Operating, Maximum

+175 °C

Temperature, Operating, Minimum

-55 °C

Time, Turn-off Delay

29 ns

Time, Turn-on Delay

16 ns

Transconductance, Forward

17 S

Voltage, Breakdown, Drain To Source

200 V

Voltage, Drain To Source

200 V

Voltage, Forward, Diode

1.5 V

Voltage, Gate To Source

±30 V

Transistor Polarity

N-Channel

Drain-source Breakdown Voltage

200 V

Gate-source Breakdown Voltage

30 V

Continuous Drain Current

44 A

Mounting Style

Through Hole

Gate Charge Qg

60 nC

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

*IRFB38N20DPBF

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Company

Part Number

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Quantity

Price

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IRFB38N20DPBF Summary of contents

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IRFB38N20DPBF International Rectifier, IRFB38N20DPBF Datasheet

IRFB38N20DPBF

Specifications of IRFB38N20DPBF

Available stocks

Related parts for IRFB38N20DPBF

IRFB38N20DPBF Summary of contents

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Related keywords