IRFB38N20DPBF International Rectifier, IRFB38N20DPBF Datasheet - Page 2

• Manufacturer Part Number: IRFB38N20DPBF
• Description: MOSFET N-CH 200V 43A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFB38N20DPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 54 mOhm @ 26A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 43A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 91nC @ 10V
• Input Capacitance (ciss) @ Vds: 2900pF @ 25V
• Power - Max: 3.8W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Channel Type: N
• Current, Drain: 43 A
• Gate Charge, Total: 60 nC
• Package Type: TO-220AB
• Polarization: N-Channel
• Power Dissipation: 300 W
• Resistance, Drain To Source On: 0.054 Ohm
• Resistance, Thermal, Junction To Case: 0.47 °C/W
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 29 ns
• Time, Turn-on Delay: 16 ns
• Transconductance, Forward: 17 S
• Voltage, Breakdown, Drain To Source: 200 V
• Voltage, Drain To Source: 200 V
• Voltage, Forward, Diode: 1.5 V
• Voltage, Gate To Source: ±30 V
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 44 A
• Mounting Style: Through Hole
• Gate Charge Qg: 60 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRFB38N20DPBF

IRFB/S/SL38N20DPbF
Dynamic @ T
Diode Characteristics
Static @ T
I
E
I
E
V
V
R
V
g
Q
Q
Q
t
t
t
t
C
C
C
C
C
C
Avalanche Characteristics
I
I
I
V
t
Q
t
GSS
AR
DSS
d(on)
d(off)
SM
r
f
S
rr
on
V
2
fs
AS
AR
DS (Avalanche)
DS(on)
(BR)DSS
GS(th)
iss
oss
rss
oss
oss
oss
SD
g
gs
gd
rr
(BR)DSS
eff.
/ T
J
Breakdown Voltage Temp. Coefficient
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Repetitive Avalanche Voltage
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) †
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
J
= 25°C (unless otherwise specified)
J
= 25°C (unless otherwise specified)
Parameter
Parameter
Parameter
Parameter
Ù
™
™
h
–––
200
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
3.0
Min. Typ. Max. Units
Min. Typ. Max. Units
17
–––
–––
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
2900 –––
3550 –––
0.22 –––
–––
–––
–––
–––
–––
––– -100
–––
450
180
380
––– 0.054
–––
–––
–––
160
1.3
60
17
28
16
95
29
47
73
Min.
–––
–––
–––
260
180
–––
250
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
240
5.0
1.5
2.0
25
25
42
91
44
V/°C
µA
nA
nC
ns
pF
nS
µC
S
V
V
V
Typ.
–––
–––
390
–––
V
V
V
V
V
V
V
V
I
V
V
V
I
R
V
V
V
ƒ = 1.0MHz
V
V
V
Reference to 25°C, I
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs „
D
D
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DD
GS
GS
DS
GS
GS
GS
J
J
G
= 26A
= 26A
= 25°C, I
= 25°C, I
= 2.5
= 0V, I
= 10V, I
= V
= 200V, V
= 160V, V
= 30V
= -30V
= 50V, I
= 100V
= 10V, „
= 100V
= 10V „
= 0V
= 25V
= 0V, V
= 0V, V
= 0V, V
GS
, I
D
S
F
DS
D
D
D
DS
DS
Conditions
= 250µA
Conditions
Conditions
= 26A
= 26A, V
= 250µA
= 26A
= 26A
GS
GS
Max.
= 0V to 160V …
460
–––
–––
= 1.0V, ƒ = 1.0MHz
= 160V, ƒ = 1.0MHz
26
= 0V
= 0V, T
www.irf.com
D
GS
= 1mA
„
J
= 0V „
G
= 150°C
Units
mJ
mJ
S
A
V
+L
D
S
D
)