IRFB38N20DPBF International Rectifier, IRFB38N20DPBF Datasheet - Page 4

• Manufacturer Part Number: IRFB38N20DPBF
• Description: MOSFET N-CH 200V 43A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFB38N20DPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 54 mOhm @ 26A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 43A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 91nC @ 10V
• Input Capacitance (ciss) @ Vds: 2900pF @ 25V
• Power - Max: 3.8W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Channel Type: N
• Current, Drain: 43 A
• Gate Charge, Total: 60 nC
• Package Type: TO-220AB
• Polarization: N-Channel
• Power Dissipation: 300 W
• Resistance, Drain To Source On: 0.054 Ohm
• Resistance, Thermal, Junction To Case: 0.47 °C/W
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 29 ns
• Time, Turn-on Delay: 16 ns
• Transconductance, Forward: 17 S
• Voltage, Breakdown, Drain To Source: 200 V
• Voltage, Drain To Source: 200 V
• Voltage, Forward, Diode: 1.5 V
• Voltage, Gate To Source: ±30 V
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 44 A
• Mounting Style: Through Hole
• Gate Charge Qg: 60 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRFB38N20DPBF

IRFB/S/SL38N20DPbF
100000
1000.00
10000
4
100.00
1000
10.00
100
1.00
0.10
10
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
1
0.0
Drain-to-Source Voltage
T J = 175°C
V DS , Drain-to-Source Voltage (V)
V SD , Source-toDrain Voltage (V)
0.5
Forward Voltage
V GS = 0V,
C iss = C gs + C gd , C ds
C rss = C gd
C oss = C ds + C gd
10
T J = 25°C
1.0
Crss
Ciss
Coss
1.5
f = 1 MHZ
100
V GS = 0V
2.0
SHORTED
2.5
1000
1000
100
0.1
12
10
10
Fig 8. Maximum Safe Operating Area
8
6
4
2
0
1
0
1
Fig 6. Typical Gate Charge Vs.
Tc = 25°C
Tj = 175°C
Single Pulse
I D = 26A
Gate-to-Source Voltage
10
V DS , Drain-toSource Voltage (V)
Q G Total Gate Charge (nC)
20
OPERATION IN THIS AREA
LIMITED BY R DS (on)
10
V DS = 160V
V DS = 100V
30
40
100
www.irf.com
50
10msec
100µsec
1msec
60
1000
70