IRFB4110PBF International Rectifier, IRFB4110PBF Datasheet

IRFB4110PBF

Manufacturer Part Number

IRFB4110PBF

Description

MOSFET N-CH 100V 120A TO-220AB

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheets

1.IRFB4110PBF.pdf (8 pages)

2.IRFB4110PBF.pdf (3 pages)

Specifications of IRFB4110PBF

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

4.5 mOhm @ 75A, 10V

Drain To Source Voltage (vdss)

100V

Current - Continuous Drain (id) @ 25° C

120A

Vgs(th) (max) @ Id

4V @ 250µA

Gate Charge (qg) @ Vgs

210nC @ 10V

Input Capacitance (ciss) @ Vds

9620pF @ 50V

Power - Max

370W

Mounting Type

Through Hole

Package / Case

TO-220-3 (Straight Leads)

Current, Drain

180 A

Gate Charge, Total

150 nC

Package Type

TO-220AB

Polarization

N-Channel

Power Dissipation

370 W

Resistance, Drain To Source On

3.7 Milliohms

Temperature, Operating, Maximum

+175 °C

Temperature, Operating, Minimum

-55 °C

Time, Turn-off Delay

78 ns

Time, Turn-on Delay

25 ns

Transconductance, Forward

160 S

Voltage, Breakdown, Drain To Source

100 V

Voltage, Forward, Diode

1.3 V

Voltage, Gate To Source

±20 V

Transistor Polarity

N-Channel

Drain-source Breakdown Voltage

100 V

Gate-source Breakdown Voltage

20 V

Continuous Drain Current

180 A

Mounting Style

Through Hole

Gate Charge Qg

150 nC

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

BOSTOCK HK LIMITED

Part Number:

IRFB4110PBF

Manufacturer:

Company:

Meier Automation Equipment Co., Limited

Part Number:

IRFB4110PBF

Manufacturer:

Quantity:

20 000

Company:

Amily Shenzhen XNWY Technology Co., Ltd

Part Number:

IRFB4110PBF

Company:

H&T Electronics

Part Number:

IRFB4110PBF

Quantity:

2 000

Company:

H&T Electronics

Part Number:

IRFB4110PBF

Quantity:

20 000

Current page: 1 of 8
Download datasheet (279Kb)

Benefits

dv/dt

Applications

Absolute Maximum Ratings

Avalanche Characteristics

Thermal Resistance

www.irf.com

STG

AS (Thermally limited)

θJC

θCS

θJA

@ T

Improved Gate, Avalanche and Dynamic dv/dt

Ruggedness

Fully Characterized Capacitance and Avalanche

Enhanced body diode dV/dt and dI/dt Capability

High Efficiency Synchronous Rectification in SMPS

Uninterruptible Power Supply

High Speed Power Switching

Hard Switched and High Frequency Circuits

SOA

Symbol

= 25°C

= 100°C

= 25°C

Continuous Drain Current, VGS @ 10V (Silicon Limited)

Continuous Drain Current, V

Pulsed Drain Current d

Maximum Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Peak Diode Recovery f

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case)

Mounting torque, 6-32 or M3 screw

Single Pulse Avalanche Energy e

Avalanche Current d

Repetitive Avalanche Energy g

Junction-to-Case k

Case-to-Sink, Flat Greased Surface

Junction-to-Ambient j

Parameter

@ 10V (Silicon Limited)

@ 10V (Wire Bond Limited)

D (Silicon Limited)

D (Package Limited)

DSS

DS(on)

Gate

typ.

IRFB4110PbF

max.

Typ.

See Fig. 14, 15, 22a, 22b

0.50

–––

10lbxin (1.1Nxm)

-55 to + 175

Max.

180c

130c

HEXFET

120

670

370

± 20

300

190

2.5

5.3

Drain

0.402

Max.

–––

180A c

3.7m :

4.5m :

Power MOSFET

100V

120A

TO-220AB

Source

Units

W/°C

°C/W

V/ns

°C

04/07/08

Related parts for IRFB4110PBF

IRFB4110PBF Summary of contents

Page 1

... I AR Repetitive Avalanche Energy Thermal Resistance Symbol Parameter Junction-to-Case k R θJC R Case-to-Sink, Flat Greased Surface θCS Junction-to-Ambient j R θJA www.irf.com IRFB4110PbF V DSS R typ. DS(on) max (Silicon Limited (Package Limited Gate @ 10V (Silicon Limited 10V (Wire Bond Limited) GS See Fig. 14, 15, 22a, 22b Typ. ® ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Symbol Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V /∆T Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS I ...

Page 3

VGS TOP 15V 10V 8.0V 6.0V 5.5V 5.0V 4.8V BOTTOM 4.5V 100 4.5V ≤ 60µs PULSE WIDTH Tj = 25° Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 100 ...

Page 4

175°C 100 25° 0.1 0.0 0.5 1.0 1 Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 180 160 Limited By Package 140 ...

Page 5

D = 0.50 0.1 0.20 0.10 0.05 0.02 0.01 0.01 0.001 SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 1E-006 Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case 1000 Duty Cycle = Single Pulse 100 0.01 0.05 10 0.10 1 ...

Page 6

250µA 2 1.0mA 1.0A 1.5 1.0 0.5 -75 -50 - 100 125 150 175 200 Temperature ( °C ) Fig ...

Page 7

D.U.T + ƒ ‚ - R • • • SD • Fig 20 D.U 20V V GS 0.01 Ω Fig 21a. Unclamped Inductive Test Circuit ...

Page 8

Y6HQG ) UCDTÃDTÃ6IÃDSA Ã GPUÃ8P9 Ã &'( 6TT H7G 9ÃPIÃXXÃ (Ã ((& DIÃUC Ã6TT H7G`ÃGDI ÃÅ8Å Note: "P" in assembly line position indicates "Lead-Free" TO-220AB packages are not recommended for Surface Mount Application. IR WORLD HEADQUARTERS: 233 Kansas St., ...

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