IRF2804PBF International Rectifier, IRF2804PBF Datasheet

MOSFET N-CH 40V 75A TO-220AB

IRF2804PBF

Manufacturer Part Number
IRF2804PBF
Description
MOSFET N-CH 40V 75A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Type
Power MOSFETr
Datasheets

Specifications of IRF2804PBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2.3 mOhm @ 75A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
75A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
240nC @ 10V
Input Capacitance (ciss) @ Vds
6450pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Current, Drain
280 A
Gate Charge, Total
160 nC
Package Type
TO-220AB
Polarization
N-Channel
Power Dissipation
330 W
Resistance, Drain To Source On
1.8 Milliohms
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
130 ns
Time, Turn-on Delay
13 ns
Transconductance, Forward
130 S
Voltage, Breakdown, Drain To Source
40 V
Voltage, Forward, Diode
1.3 V
Voltage, Gate To Source
±20 V
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.0023Ohm
Drain-source On-volt
40V
Gate-source Voltage (max)
±20V
Drain Current (max)
280A
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 175C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
280 A
Mounting Style
Through Hole
Gate Charge Qg
160 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRF2804PBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF2804PBF
Manufacturer:
IRmex
Quantity:
100 000
Part Number:
IRF2804PBF
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRF2804PBF
0
Company:
Part Number:
IRF2804PBF
Quantity:
9 000
Features
l
l
l
l
l
l
Description
This HEXFET
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These features combine
to make this design an extremely efficient and
reliable device for use in a wide variety of other
applications.
HEXFET
Absolute Maximum Ratings
I
I
I
I
P
V
E
E
I
E
T
T
Thermal Resistance
R
R
R
R
www.irf.com
D
D
D
DM
AR
J
STG
D
GS
AS
AS
AR
θJC
θCS
θJA
θJA
@ T
@ T
@ T
@T
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
(tested)
C
C
C
C
= 25°C
= 100°C
= 25°C
= 25°C
®
is a registered trademark of International Rectifier.
®
Power MOSFET utilizes the latest
Continuous Drain Current, V
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient (PCB Mount, steady state)
Parameter
Parameter
GS
GS
GS
h
@ 10V (Silicon Limited)
@ 10V (See Fig. 9)
@ 10V
(Package Limited)
IRF2804PbF
TO-220AB
i
j
G
d
300 (1.6mm from case )
HEXFET
See Fig.12a,12b,15,16
Typ.
0.50
–––
–––
–––
10 lbf•in (1.1N•m)
D
S
IRF2804SPbF
-55 to + 175
D
Max.
1080
1160
IRF2804SPbF
270
190
300
± 20
540
IRF2804LPbF
2.0
75
2
Pak
IRF2804PbF
®
R
Power MOSFET
DS(on)
0.50
Max.
–––
V
62
40
DSS
I
l
D
= 75A
IRF2804LPbF
PD - 95332B
= 2.0mΩ
= 40V
TO-262
Units
Units
W/°C
°C/W
mJ
mJ
°C
W
A
V
A
1

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IRF2804PBF Summary of contents

Page 1

... Junction-to-Ambient (PCB Mount, steady state) θJA ® HEXFET is a registered trademark of International Rectifier. www.irf.com G TO-220AB IRF2804PbF Parameter @ 10V (Silicon Limited 10V (See Fig 10V (Package Limited Parameter 95332B IRF2804PbF IRF2804SPbF IRF2804LPbF ® HEXFET Power MOSFET 40V DSS R = 2.0mΩ DS(on 75A Pak TO-262 IRF2804SPbF IRF2804LPbF Max ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R SMD Static Drain-to-Source On-Resistance DS(on) R TO-220 Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ...

Page 3

VGS TOP 15V 10V 8.0V 7.0V 6.0V 1000 5.5V 5.0V BOTTOM 4.5V 100 10 4.5V 20µs PULSE WIDTH Tj = 25° Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 ...

Page 4

0V MHZ C iss = SHORTED C rss = C gd 10000 C oss = 8000 Ciss 6000 4000 Coss ...

Page 5

Limited By Package 250 200 150 100 100 125 Case Temperature (°C) Fig 9. Maximum Drain Current vs. Case Temperature 0.50 0.1 0.20 0.10 0.05 0.02 0.01 0.01 ...

Page 6

D.U 20V V GS 0.01 Ω Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms ...

Page 7

Duty Cycle = Single Pulse 0.01 100 0.05 0. 1.0E-06 1.0E-05 Fig 15. Typical Avalanche Current Vs.Pulsewidth 600 TOP Single Pulse BOTTOM 10% Duty Cycle 500 75A 400 300 200 100 ...

Page 8

SD • Fig 17. Fig 18a. Switching Time Test Circuit V DS 90% 10 Fig 18b. Switching Time Waveforms 8 Driver Gate Drive P.W. D.U.T. ...

Page 9

Notes: 1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/datasheets/data/auirf2804.pdf 2. For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com 9 ...

Page 10

UCDTÃDTÃ6IÃDSA$"TÃXDUC GPUÃ8P @Ã'!# 6TT@H7G@ ÃPIÃXXÃ!Ã! DIÃUC@Ã6TT@H7G`ÃGDI@ÃÅGÅ 5 Notes: 1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/datasheets/data/auirf2804.pdf 2. For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 DIU@SI6UDPI6G S@8UDAD@S A$"T GPBP ...

Page 11

TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information OR Notes: 1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/datasheets/data/auirf2804.pdf 2. For the most current drawing please refer to IR website at http://www.irf.com/package/ ...

Page 12

Dimensions are shown in millimeters (inches) TRR FEED DIRECTION 1.85 (.073) 1.65 (.065) TRL FEED DIRECTION 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ ...

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