IXTH200N10T IXYS, IXTH200N10T Datasheet - Page 5

MOSFET N-CH 100V 200A TO-247

IXTH200N10T

Manufacturer Part Number
IXTH200N10T
Description
MOSFET N-CH 100V 200A TO-247
Manufacturer
IXYS
Series
TrenchMV™r
Datasheet

Specifications of IXTH200N10T

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
5.5 mOhm @ 50A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
200A
Vgs(th) (max) @ Id
4.5V @ 250µA
Gate Charge (qg) @ Vgs
152nC @ 10V
Input Capacitance (ciss) @ Vds
9400pF @ 25V
Power - Max
550W
Mounting Type
Through Hole
Package / Case
TO-247
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0055 Ohms
Drain-source Breakdown Voltage
100 V
Continuous Drain Current
200 A
Power Dissipation
550 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
100
Id(cont), Tc=25°c, (a)
200
Rds(on), Max, Tj=25°c, (?)
0.0055
Ciss, Typ, (pf)
9400
Qg, Typ, (nc)
152
Trr, Typ, (ns)
76
Trr, Max, (ns)
-
Pd, (w)
550
Rthjc, Max, (k/w)
0.27
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
© 2008 IXYS CORPORATION, All rights reserved
220
200
180
160
140
120
100
38
37
36
35
34
33
32
31
30
33
32
31
30
29
28
27
26
25
24
23
22
80
60
40
20
0
24
25
2
26
t
T
V
Switching Times vs. Gate Resistance
r
J
DS
35
I
= 125ºC, V
4
Switching Times vs. Drain Current
D
Rise Time vs. Junction Temperature
28
= 50V
= 25A
45
30
Fig. 17. Resistive Turn-off
Fig. 15. Resistive Turn-on
6
Fig. 13. Resistive Turn-on
T
T
T
T
t
J
J
d(on)
J
J
32
GS
= 125ºC
= 25ºC
= 25ºC
= 125ºC
I
55
T
8
D
= 10V
I
J
D
= 50A
- - - -
34
R
- Degrees Centigrade
- Amperes
G
I
65
D
10
- Ohms
36
= 50A
38
75
12
t
R
V
f
DS
G
40
= 3.3Ω, V
= 50V
85
14
42
95
44
t
16
d(off)
GS
I
R
V
V
D
G
GS
DS
= 10V
= 25A
46
= 3.3Ω
105
= 10V
= 50V
- - - -
18
48
115
20
50
85
80
75
70
65
60
55
50
45
40
35
30
80
75
70
65
60
55
50
45
40
125
200
180
160
140
120
100
42
40
38
36
34
32
30
28
80
60
40
20
0
25
34
33
32
31
30
29
28
27
26
25
24
23
22
2
Switching Times vs. Junction Temperature
24
t
R
V
t
T
V
Switching Times vs. Gate Resistance
35
f
DS
G
f
J
DS
4
26
= 125ºC, V
R
V
V
= 3.3Ω, V
= 50V
= 50V
G
GS
DS
= 3.3Ω
45
= 10V
= 50V
28
Fig. 18. Resistive Turn-off
Fig. 16. Resistive Turn-off
6
Rise Time vs. Drain Current
T
t
Fig. 14. Resistive Turn-on
30
d(off)
GS
t
J
55
d(off)
GS
I
- Degrees Centigrade
D
= 10V
8
= 10V
= 25A
32
- - - -
- - - -
R
65
G
I
10
34
D
- Ohms
- Amperes
I
75
D
36
= 25A
12
85
38
I
D
14
= 50A
T
40
J
95
T
J
= 125ºC
IXYS REF: T_200N10T(6V)9-30-08-D
I
IXTQ200N10T
IXTH200N10T
= 25ºC
D
42
16
= 50A
105
44
18
115
46
20
125
48
300
275
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200
175
150
125
100
75
50
75
70
65
60
55
50
45
40
50

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