MOSFET N-CH 75V 250A TO-247

IXTH250N075T

Manufacturer Part NumberIXTH250N075T
DescriptionMOSFET N-CH 75V 250A TO-247
ManufacturerIXYS
SeriesTrenchMV™
IXTH250N075T datasheet
 


Specifications of IXTH250N075T

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs4 mOhm @ 50A, 10VDrain To Source Voltage (vdss)75V
Current - Continuous Drain (id) @ 25° C250AVgs(th) (max) @ Id4V @ 250µA
Gate Charge (qg) @ Vgs200nC @ 10VInput Capacitance (ciss) @ Vds9900pF @ 25V
Power - Max550WMounting TypeThrough Hole
Package / CaseTO-247ConfigurationSingle
Transistor PolarityN-ChannelResistance Drain-source Rds (on)0.004 Ohms
Drain-source Breakdown Voltage75 VContinuous Drain Current250 A
Power Dissipation550 WMaximum Operating Temperature+ 175 C
Mounting StyleThrough HoleMinimum Operating Temperature- 55 C
Vdss, Max, (v)75Id(cont), Tc=25°c, (a)250
Rds(on), Max, Tj=25°c, (?)0.0040Ciss, Typ, (pf)9900
Qg, Typ, (nc)200Trr, Typ, (ns)80
Trr, Max, (ns)-Pd, (w)550
Rthjc, Max, (k/w)0.27Package StyleTO-247
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
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TM
TrenchMV
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Symbol
Test Conditions
V
T
= 25° C to 175° C
DSS
J
V
T
= 25° C to 175° C; R
DGR
J
V
Transient
GSM
I
T
= 25° C
D25
C
I
Lead Current Limit, RMS
LRMS
I
T
= 25° C, pulse width limited by T
DM
C
I
T
= 25° C
AR
C
E
T
= 25° C
AS
C
≤ I
, di/dt ≤ 100 A/µs, V
dv/dt
I
S
DM
≤ 175° C, R
= 3.3 Ω
T
J
G
P
T
= 25° C
D
C
T
J
T
JM
T
stg
T
1.6 mm (0.062 in.) from case for 10 s
L
T
Plastic body for 10 seconds
SOLD
M
Mounting torque
d
Weight
TO-3P
TO-247
Symbol
Test Conditions
(T
= 25° C unless otherwise specified)
J
BV
V
= 0 V, I
= 250 µA
DSS
GS
D
= 250 µA
V
V
= V
, I
GS(th)
DS
GS
D
= ± 20 V, V
I
V
= 0 V
GSS
GS
DS
I
V
= V
DSS
DS
DSS
V
= 0 V
GS
R
V
= 10 V, I
= 50 A, Notes 1, 2
DS(on)
GS
D
© 2006 IXYS CORPORATION All rights reserved
Preliminary Technical Information
IXTH250N075T
IXTQ250N075T
Maximum Ratings
75
= 1 MΩ
75
GS
± 20
250
75
560
JM
40
1.5
≤ V
DD
DSS
550
-55 ... +175
175
-55 ... +175
300
260
1.13 / 10 Nm/lb.in.
5.5
Characteristic Values
Min.
Typ.
75
2.0
T
= 150° C
J
3.3
V
=
DSS
I
= 250
D25
≤ ≤ ≤ ≤ ≤
R
DS(on)
TO-247 (IXTH)
G
D
S
V
V
TO-3P (IXTQ)
V
A
A
A
A
J
G
D
3
V/ns
S
G = Gate
D = Drain
W
S = Source
TAB = Drain
°C
°C
°C
Features
Ultra-low On Resistance
°C
Unclamped Inductive Switching (UIS)
°C
rated
Low package inductance
- easy to drive and to protect
g
175 ° C Operating Temperature
6
g
Advantages
Easy to mount
Space savings
High power density
Max.
Applications
Automotive
V
- Motor Drives
- 42V Power Bus
4.0
V
- ABS Systems
± 200
nA
DC/DC Converters and Off-line UPS
Primary Switch for 24V and 48V
5
µA
Systems
µA
250
High Current Switching
4.0
m Ω
Applications
75
V
A
4.0 mΩ Ω Ω Ω Ω
(TAB)
(TAB)
DS99637(11/06)

IXTH250N075T Summary of contents

  • Page 1

    ... ± GSS DSS DS DSS Notes 1, 2 DS(on © 2006 IXYS CORPORATION All rights reserved Preliminary Technical Information IXTH250N075T IXTQ250N075T Maximum Ratings MΩ ± 20 250 75 560 JM 40 1.5 ≤ DSS 550 -55 ... +175 175 -55 ... +175 300 260 1. Nm/lb.in. 5.5 Characteristic Values Min. Typ. ...

  • Page 2

    ... A 50 DSS 200 , DSS D 60 0.25 Characteristic Values Min. Typ Kelvin test contact DS(on) 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTH250N075T IXTQ250N075T TO-247AD Outline Max Terminals Gate 3 - Source nC Dim. Millimeter nC Min. Max. A 4.7 5 2.2 2. 2.2 2.6 0.27 ° ...

  • Page 3

    ... Value D = 175º 25ºC J 200 250 300 350 IXTH250N075T IXTQ250N075T Fig. 2. Extended Output Characteristics @ 25º 10V 0.5 1 1 Volts DS Fig Normalized to I DS(on) vs. Junction Temperature 2 10V GS 2.2 2.0 1 ...

  • Page 4

    ... IXYS reserves the right to change limits, test conditions, and dimensions. 180 160 140 120 100 5 25ºC J 0.9 1 1.1 1.2 1.3 1.00 C iss 0.10 C oss C rss 0. IXTH250N075T IXTQ250N075T Fig. 8. Transconductance 40ºC J 25ºC 150º 100 125 150 I - Amperes D Fig. 10. Gate Charge V = 37. 25A 10mA ...

  • Page 5

    ... IXTH250N075T IXTQ250N075T Fig. 14. Resistive Turn-on Rise Time vs. Drain Current T = 25º 3.3 Ω 10V 37. 125º Amperes D Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature - - - - d(off 3.3 Ω 10V 37. 25A 50A ...