IXTH250N075T IXYS, IXTH250N075T Datasheet - Page 2

• Manufacturer Part Number: IXTH250N075T
• Description: MOSFET N-CH 75V 250A TO-247
• Manufacturer: IXYS
• Series: TrenchMV™r

Specifications of IXTH250N075T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 250A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 200nC @ 10V
• Input Capacitance (ciss) @ Vds: 9900pF @ 25V
• Power - Max: 550W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.004 Ohms
• Drain-source Breakdown Voltage: 75 V
• Continuous Drain Current: 250 A
• Power Dissipation: 550 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 75
• Id(cont), Tc=25°c, (a): 250
• Rds(on), Max, Tj=25°c, (?): 0.0040
• Ciss, Typ, (pf): 9900
• Qg, Typ, (nc): 200
• Trr, Typ, (ns): 80
• Trr, Max, (ns): -
• Pd, (w): 550
• Rthjc, Max, (k/w): 0.27
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
T
I
I
V
t
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
d(on)
d(off)
S
SM
r
f
Notes: 1.
rr
one or moreof the following U.S. patents:
fs
J
oss
thJC
thCH
SD
iss
rss
g(on)
gs
gd
The product presented herein is under development. The Technical Specifications
offered are derived from data gathered during objective characterizations of preliminary
engineering lots; but also may yet contain some information supplied during a pre-
production design evaluation. IXYS reserves the right to change limits, test conditions,
and dimensions without notice.
J
= 25° C unless otherwise specified)
= 25° C unless otherwise specified)
2. On through-hole packages, R
location must be 5 mm or less from the package body.
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %;
Test Conditions
V
V
Resistive Switching Times
V
R
V
Test Conditions
V
Pulse width limited by T
I
I
V
F
F
DS
GS
GS
GS
GS
R
G
= 50 A, V
= 50 A, -di/dt = 100 A/µs
= 25 V, V
= 10 V; I
= 3.3 Ω (External)
= 10 V, V
PRELIMINARY TECHNICAL INFORMATION
= 0 V
= 0 V, V
= 10 V, V
GS
D
DS
GS
DS
= 60 A, Note 1
DS
= 0 V, Note 1
= 25 V, f = 1 MHz
= 0 V
= 0.5 V
= 0.5 V
4,850,072
4,881,106
DSS
DSS
JM
4,931,844
5,017,508
5,034,796
, I
, I
D
D
DS(on)
= 25 A
= 50 A
Kelvin test contact
5,049,961
5,063,307
5,187,117
Min.
Min.
5,237,481
5,381,025
5,486,715
75
Characteristic Values
Characteristic Values
9900
1330
Typ.
Typ.
0.25
122
285
200
32
50
58
45
50
60
80
6,162,665
6,259,123 B1
6,306,728 B1
Max.
Max.
0.27 °C/W
250
560
1.0
°C/W
6,404,065 B1
6,534,343
6,583,505
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
S
A
A
V
Pins: 1 - Gate
TO-247AD Outline
TO-3P (IXTQ) Outline
6,683,344
6,710,405B2
6,710,463
Terminals: 1 - Gate
3 - Source 4, TAB - Drain
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
∅P
Q
R
S
1
2
1
2
20.80
15.75
19.81
1.65
2.87
5.20
3.55
5.89
4.32
6.15 BSC
Min.
6,727,585
6,759,692
6771478 B2
4.7
2.2
2.2
1.0
IXTQ250N075T
Millimeter
1
IXTH250N075T
3 - Source
.4
2 - Drain
2
21.46
16.26
20.32
Max.
3
2.54
2.13
3.12
5.72
4.50
3.65
6.40
5.49
5.3
2.6
1.4
.8
7,005,734 B2
7,063,975 B2
7,071,537
0.205 0.225
0.232 0.252
2 - Drain
Tab - Drain
.185
.087
.059
.040
.065
.113
.016
.819
.610
.780
.140
.170
Min.
242 BSC
Inches
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
.800
.177
.144
.216