IXTH250N075T IXYS, IXTH250N075T Datasheet - Page 5

• Manufacturer Part Number: IXTH250N075T
• Description: MOSFET N-CH 75V 250A TO-247
• Manufacturer: IXYS
• Series: TrenchMV™r

Specifications of IXTH250N075T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 250A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 200nC @ 10V
• Input Capacitance (ciss) @ Vds: 9900pF @ 25V
• Power - Max: 550W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.004 Ohms
• Drain-source Breakdown Voltage: 75 V
• Continuous Drain Current: 250 A
• Power Dissipation: 550 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 75
• Id(cont), Tc=25°c, (a): 250
• Rds(on), Max, Tj=25°c, (?): 0.0040
• Ciss, Typ, (pf): 9900
• Qg, Typ, (nc): 200
• Trr, Typ, (ns): 80
• Trr, Max, (ns): -
• Pd, (w): 550
• Rthjc, Max, (k/w): 0.27
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2006 IXYS CORPORATION All rights reserved
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100
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36
80
60
40
20
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50
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41
38
35
32
29
26
23
20
0
24 26 28 30 32 34 36 38 40 42 44 46 48 50
25
2
t
T
V
Switching Times vs. Gate Resistance
I
r
J
DS
t
R
V
Switching Times vs. Drain Current
D
35
= 125ºC, V
4
f
G
DS
Rise Time vs. Junction Temperature
= 25A
= 37.5V
= 3.3 Ω , V
= 37.5V
Fig. 17. Resistive Turn-off
Fig. 15. Resistive Turn-on
45
6
t
d(on)
Fig. 13. Resistive Turn-on
t
d(off)
GS
GS
I
I
55
T
8
- - - -
D
D
= 10V
J
R
- - - -
= 10V
T
- Amperes
= 50A
- Degrees Centigrade
G
J
= 25ºC, 125ºC
10
- Ohms
65
I
12
D
75
= 50A, 25A
14
85
16
95
R
V
V
G
GS
DS
18
105
= 3.3 Ω
= 37.5V
= 10V
20
115
85
80
75
70
65
60
55
50
45
40
35
100
95
90
85
80
75
70
65
60
55
50
125
240
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180
160
140
120
100
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52
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50
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46
45
44
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41
40
80
60
40
20
55
50
45
40
35
30
25
20
25
24
Switching Times vs. Junction Temperature
2
t
R
V
Switching Times vs. Gate Resistance
t
T
V
f
35
26
G
DS
f
J
DS
R
V
V
4
= 125ºC, V
= 3.3 Ω , V
G
GS
DS
= 37.5V
= 37.5V
= 3.3 Ω
28
45
= 37.5V
= 10V
Fig. 16. Resistive Turn-off
Fig. 18. Resistive Turn-off
T
6
t
Rise Time vs. Drain Current
J
30
d(off)
t
d(off)
Fig. 14. Resistive Turn-on
- Degrees Centigrade
55
GS
GS
8
- - - -
= 10V
32
- - - -
R
= 10V
65
G
I
I
D
D
10
- Ohms
34
= 50A
- Amperes
75
36
12
I
D
85
IXYS REF: T_250N075T (6V) 8-31-08-A.xls
= 25A
38
I
IXTQ250N075T
IXTH250N075T
D
14
= 25A
T
T
95
40
I
J
J
D
= 25ºC
= 125ºC
= 50A
16
42
105 115 125
44
18
46
20
390
360
330
300
270
240
210
180
150
120
90
60
48
102
98
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90
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50