IXFH13N50 IXYS, IXFH13N50 Datasheet
IXFH13N50
Manufacturer Part Number
IXFH13N50
Description
MOSFET N-CH 500V 13A TO-247AD
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet
1.IXFH13N50.pdf
(4 pages)
Specifications of IXFH13N50
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
400 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
13A
Vgs(th) (max) @ Id
4V @ 2.5mA
Gate Charge (qg) @ Vgs
120nC @ 10V
Input Capacitance (ciss) @ Vds
2800pF @ 25V
Power - Max
180W
Mounting Type
Through Hole
Package / Case
TO-247AD
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.4 Ohms
Forward Transconductance Gfs (max / Min)
9 s
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
13 A
Power Dissipation
180 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Fall Time
32 ns
Minimum Operating Temperature
- 55 C
Rise Time
27 ns
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
13
Rds(on), Max, Tj=25°c, (?)
0.4
Ciss, Typ, (pf)
2800
Qg, Typ, (nc)
110
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
179
Rthjc, Max, (ºc/w)
0.70
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFH13N50
Manufacturer:
IXYS
Quantity:
5 000
Company:
Part Number:
IXFH13N50
Manufacturer:
IXYS
Quantity:
15 500
© 2000 IXYS All rights reserved
HiPerFET
Power MOSFETs
N-Channel Enhancement Mode
High dv/dt, Low t
Symbol
V
V
V
V
I
I
I
E
dv/dt
P
T
T
T
T
M
Weight
Symbol
V
V
I
I
R
IXYS reserves the right to change limits, test conditions, and dimensions.
D25
DM
AR
GSS
DSS
J
JM
stg
L
DGR
AR
D
DSS
GS
GSM
DSS
GS(th)
DS(on)
d
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
Test Conditions
V
V
V
V
V
Pulse test, t £ 300 ms, duty cycle d £ 2 %
S
V
C
C
C
C
C
J
J
J
GS
DS
GS
DS
GS
GS
£ 150°C, R
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
£ I
= 25°C
= 0 V, I
= V
= ±20 V
= 0.8 • V
= 0 V
= 10 V, I
DM
TM
, di/dt £ 100 A/ms, V
GS
rr
, HDMOS
, I
D
D
DC
D
= 250 mA
DSS
= 2.5 mA
G
, V
= 0.5 • I
= 2 W
DS
= 0
D25
TM
GS
= 1 MW
Family
DD
T
T
£ V
J
J
(T
= 25°C
= 125°C
DSS
J
= 25°C, unless otherwise specified)
JM
,
TO-204 = 18 g, TO-247 = 6 g
IXFH 13 N50
IXFM 13 N50
min.
500
Characteristic Values
2
-55 ... +150
-55 ... +150
Maximum Ratings
typ.
1.13/10 Nm/lb.in.
500
500
±20
±30
180
150
300
13
52
13
18
5
max.
±100
200
0.4
4
1
V/ns
mA
mJ
nA
mA
°C
°C
°C
°C
W
W
V
V
V
V
A
A
A
V
V
V
I
R
t
TO-247 AD (IXFH)
TO-204 AA (IXFM)
G = Gate,
S = Source,
Features
Applications
Advantages
D (cont)
rr
International standard packages
Low R
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic Rectifier
DC-DC converters
Uninterruptible Power Supplies (UPS)
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Low voltage relays
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
Space savings
High power density
DSS
DS(on)
DS (on)
HDMOS
= 500 V
= 13 A
= 0.4 W
£ 250 ns
D
D = Drain,
TAB = Drain
TM
G
process
91524D (10/95)
(TAB)
1 - 4
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IXFH13N50 Summary of contents
Page 1
... V DSS DS DSS 0.5 • I DS(on Pulse test, t £ 300 ms, duty cycle d £ IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved IXFH 13 N50 IXFM 13 N50 TM Family Maximum Ratings 500 = 1 MW 500 GS ±20 ± ...
Page 2
... 25° 125° 25°C 0 125°C 1. 25° 125° IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 4,850,072 4,931,844 5,034,796 IXFH 13N50 IXFH 13N50 TO-247 AD (IXFH) Outline Dim. Millimeter Min. Max. Min. ...
Page 3
... J 1.3 1.2 1.1 1.0 0.9 0 Amperes D Fig. 5 Drain Current vs. Case Temperature 15.0 13N50 12.5 10.0 7.5 5.0 2.5 0.0 -50 - Degrees C C © 2000 IXYS All rights reserved 10V 15V 100 125 150 IXFH 13N50 IXFH 13N50 Fig. 2 Input Admittance 25° ...
Page 4
... V - Volts DS Fig.11 Transient Thermal Impedance 1. 0 0 0.05 D=0.02 D=0.01 0.01 Single Pulse 0.00001 0.0001 © 2000 IXYS All rights reserved Fig.8 Forward Bias Safe Operating Area 100 10 1 0.1 75 100 1 Fig.10 Source Current vs. Source 0.00 0.001 0.01 Time - Seconds ...