IXFH26N50P IXYS, IXFH26N50P Datasheet
Home Discrete Semiconductor Products MOSFETs, GaNFETs - Single IXFH26N50P
Manufacturer Part Number
IXFH26N50P
Description
MOSFET N-CH 500V 26A TO-247
Specifications of IXFH26N50P
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
230 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
26A
Vgs(th) (max) @ Id
5.5V @ 4mA
Gate Charge (qg) @ Vgs
60nC @ 10V
Input Capacitance (ciss) @ Vds
3600pF @ 25V
Power - Max
400W
Mounting Type
Through Hole
Package / Case
TO-247
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.23 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
26 s
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
26 A
Power Dissipation
400000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
26
Rds(on), Max, Tj=25°c, (?)
0.23
Ciss, Typ, (pf)
3600
Qg, Typ, (nc)
60
Trr, Typ, (ns)
-
Trr, Max, (ns)
200
Pd, (w)
400
Rthjc, Max, (ºc/w)
0.31
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
PolarHV
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
(T
BV
V
I
I
R
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
T
M
F
Weight
GSS
DSS
D25
DM
AR
GS(th)
© 2006 IXYS All rights reserved
DS(on)
J
JM
stg
L
SOLD
C
DSS
DGR
GSS
GSM
AR
AS
D
J
d
DSS
= 25 C, unless otherwise specified)
Test Conditions
V
V
V
V
V
Pulse test, t 300 s, duty cycle d
Test Conditions
T
T
Continuos
Transient
T
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque
Mounting force
TO-247
PLUS220 & PLUS220SMD
V
S
GS
DS
GS
DS
GS
J
J
C
C
C
C
C
J
C
GS
= 25 C to 150 C
= 25 C to 150 C; R
= 25 C
= 25 C, pulse width limited by T
= 25 C
= 25 C
= 25 C
= 25 C
TM
= 0 V, I
= V
= 30 V
= V
= 0 V
= 10 V, I
150 C, R
I
DM
, di/dt
GS
DSS
HiPerFET
, I
D
D
DC
D
= 250 A
= 4 mA
, V
= 0.5 I
G
100 A/ s, V
= 4
DS
= 0
D25
(TO-247)
(PLUS220)
GS
= 1 M
DD
T
J
= 125 C
V
DSS
IXFH 26N50P
IXFV 26N50P
IXFV 26N50PS
JM
2 %
,
500
Min.
3.0
11..65/2.5..15
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
Typ.
1.13/10 Nm/lb.in.
500
500
400
150
300
260
1.0
30
40
26
78
26
40
10
6
5
100
250
230
Max.
5.5
25
V/ns
N/lb
m
nA
mJ
W
V
V
A
A
C
C
C
C
C
V
V
V
V
A
A
A
g
g
J
PLUS220 (IXFV)
PLUS220SMD (IXFV_S)
G = Gate
S = Source
Features
l
l
l
l
Advantages
l
l
l
TO-247 (IXFH)
International standard packages
Fast intrinsic diode
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Easy to mount
Space savings
High power density
V
I
R
t
D25
rr
G
DS(on)
DSS
G
D
S
S
=
=
D = Drain
TAB = Drain
500
230 m
200 ns
26
DS99276E(12/05)
D (TAB)
D (TAB)
D (TAB)
A
V
Related parts for IXFH26N50P
IXFH26N50P Summary of contents
... GS(th GSS DSS DS DSS 0.5 I DS(on D25 Pulse test, t 300 s, duty cycle d © 2006 IXYS All rights reserved IXFH 26N50P IXFV 26N50P IXFV 26N50PS Maximum Ratings 500 = 1 M 500 1 DSS 400 -55 ... +150 150 -55 ... +150 300 260 1.13/10 Nm/lb.in. 11..65/2.5.. Characteristic Values Min ...
... 100V PLUS220SMD (IXFV_S) Outline IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 Characteristic Values ( unless otherwise specified) J Min. Typ. Max. , pulse test 16 ...
... Fig. 3. Output Characteristics @ 125º Volts DS Fig Normalized to I DS(on Drain Current 3 10V GS 2.8 2.6 2.4 2.2 2 1.8 1.6 1.4 1 Amperes D © 2006 IXYS All rights reserved 3.1 = 10V 2.8 7V 2.5 6V 2.2 1.9 1.6 1 0.7 0 -50 = 13A Value 125º 25º ...
... V - Volts GS Fig. 9. Forward Voltage Drop of Intrinsic Diode 125º 0.4 0.5 0.6 0.7 0 Volts SD Fig. 11. Capacitance 10,000 MHz C iss 1,000 C oss 100 C rss Volts DS IXYS reserves the right to change limits, test conditions, and dimensions 5 25º 0.9 1 1.1 100 IXFH 26N50P ...
... IXYS All rights reserved IXFH 26N50P Fig. 13. Maximum Transient Thermal Resistance 0.01 0.1 Pulse W idth - Seconds IXFV 26N50P IXFV 26N50PS 1 10 ...
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