MOSFET N-CH 500V 26A TO-247

IXFH26N50P

Manufacturer Part NumberIXFH26N50P
DescriptionMOSFET N-CH 500V 26A TO-247
ManufacturerIXYS
SeriesPolarHV™
IXFH26N50P datasheet
 


Specifications of IXFH26N50P

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs230 mOhm @ 500mA, 10VDrain To Source Voltage (vdss)500V
Current - Continuous Drain (id) @ 25° C26AVgs(th) (max) @ Id5.5V @ 4mA
Gate Charge (qg) @ Vgs60nC @ 10VInput Capacitance (ciss) @ Vds3600pF @ 25V
Power - Max400WMounting TypeThrough Hole
Package / CaseTO-247ConfigurationSingle
Transistor PolarityN-ChannelResistance Drain-source Rds (on)0.23 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)26 sDrain-source Breakdown Voltage500 V
Gate-source Breakdown Voltage+/- 30 VContinuous Drain Current26 A
Power Dissipation400000 mWMaximum Operating Temperature+ 150 C
Mounting StyleThrough HoleMinimum Operating Temperature- 55 C
Vdss, Max, (v)500Id(cont), Tc=25°c, (a)26
Rds(on), Max, Tj=25°c, (?)0.23Ciss, Typ, (pf)3600
Qg, Typ, (nc)60Trr, Typ, (ns)-
Trr, Max, (ns)200Pd, (w)400
Rthjc, Max, (ºc/w)0.31Package StyleTO-247
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
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PolarHV
HiPerFET
TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
Test Conditions
V
T
= 25 C to 150 C
DSS
J
V
T
= 25 C to 150 C; R
DGR
J
V
Continuos
GSS
V
Transient
GSM
I
T
= 25 C
D25
C
I
T
= 25 C, pulse width limited by T
DM
C
I
T
= 25 C
AR
C
E
T
= 25 C
AR
C
E
T
= 25 C
AS
C
dv/dt
I
I
, di/dt
100 A/ s, V
S
DM
T
150 C, R
= 4
J
G
P
T
= 25 C
D
C
T
J
T
JM
T
stg
T
1.6 mm (0.062 in.) from case for 10 s
L
T
Plastic body for 10 s
SOLD
M
Mounting torque
(TO-247)
d
F
Mounting force
(PLUS220)
C
Weight
TO-247
PLUS220 & PLUS220SMD
Symbol
Test Conditions
(T
= 25 C, unless otherwise specified)
J
BV
V
= 0 V, I
= 250 A
DSS
GS
D
V
V
= V
, I
= 4 mA
GS(th)
DS
GS
D
I
V
= 30 V
, V
= 0
GSS
GS
DC
DS
I
V
= V
DSS
DS
DSS
V
= 0 V
GS
R
V
= 10 V, I
= 0.5 I
DS(on)
GS
D
D25
Pulse test, t 300 s, duty cycle d
© 2006 IXYS All rights reserved
IXFH 26N50P
IXFV 26N50P
IXFV 26N50PS
Maximum Ratings
500
= 1 M
500
GS
30
40
26
78
JM
26
40
1.0
V
,
10
DD
DSS
400
-55 ... +150
150
-55 ... +150
300
260
1.13/10 Nm/lb.in.
11..65/2.5..15
6
5
Characteristic Values
Min.
Typ.
Max.
500
3.0
100
T
= 125 C
250
J
230
2 %
V
=
500
DSS
I
=
D25
230 m
R
DS(on)
t
200 ns
rr
V
V
TO-247 (IXFH)
V
V
A
A
A
mJ
J
PLUS220 (IXFV)
V/ns
W
G
D
S
C
C
C
PLUS220SMD (IXFV_S)
C
C
N/lb
G
S
g
g
G = Gate
D = Drain
S = Source
TAB = Drain
Features
l
International standard packages
l
Fast intrinsic diode
l
Unclamped Inductive Switching (UIS)
V
rated
5.5
V
l
Low package inductance
- easy to drive and to protect
nA
Advantages
25
A
l
Easy to mount
A
l
Space savings
l
High power density
m
V
26
A
D (TAB)
D (TAB)
D (TAB)
DS99276E(12/05)

IXFH26N50P Summary of contents

  • Page 1

    ... GS(th GSS DSS DS DSS 0.5 I DS(on D25 Pulse test, t 300 s, duty cycle d © 2006 IXYS All rights reserved IXFH 26N50P IXFV 26N50P IXFV 26N50PS Maximum Ratings 500 = 1 M 500 1 DSS 400 -55 ... +150 150 -55 ... +150 300 260 1.13/10 Nm/lb.in. 11..65/2.5.. Characteristic Values Min ...

  • Page 2

    ... 100V PLUS220SMD (IXFV_S) Outline IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 Characteristic Values ( unless otherwise specified) J Min. Typ. Max. , pulse test 16 ...

  • Page 3

    ... Fig. 3. Output Characteristics @ 125º Volts DS Fig Normalized to I DS(on Drain Current 3 10V GS 2.8 2.6 2.4 2.2 2 1.8 1.6 1.4 1 Amperes D © 2006 IXYS All rights reserved 3.1 = 10V 2.8 7V 2.5 6V 2.2 1.9 1.6 1 0.7 0 -50 = 13A Value 125º 25º ...

  • Page 4

    ... V - Volts GS Fig. 9. Forward Voltage Drop of Intrinsic Diode 125º 0.4 0.5 0.6 0.7 0 Volts SD Fig. 11. Capacitance 10,000 MHz C iss 1,000 C oss 100 C rss Volts DS IXYS reserves the right to change limits, test conditions, and dimensions 5 25º 0.9 1 1.1 100 IXFH 26N50P ...

  • Page 5

    ... IXYS All rights reserved IXFH 26N50P Fig. 13. Maximum Transient Thermal Resistance 0.01 0.1 Pulse W idth - Seconds IXFV 26N50P IXFV 26N50PS 1 10 ...