MOSFET N-CH 250V 28A D2PAK

STB50N25M5

Manufacturer Part NumberSTB50N25M5
DescriptionMOSFET N-CH 250V 28A D2PAK
ManufacturerSTMicroelectronics
SeriesMDmesh™
STB50N25M5 datasheet
 

Specifications of STB50N25M5

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs65 mOhm @ 14A, 10VDrain To Source Voltage (vdss)250V
Current - Continuous Drain (id) @ 25° C28AVgs(th) (max) @ Id5V @ 100µA
Gate Charge (qg) @ Vgs44nC @ 10VInput Capacitance (ciss) @ Vds1700pF @ 50V
Power - Max110WMounting TypeSurface Mount
Package / CaseD²Pak, TO-263 (2 leads + tab)Transistor PolarityN Channel
Continuous Drain Current Id14ADrain Source Voltage Vds250V
On Resistance Rds(on)55mohmRds(on) Test Voltage Vgs10V
Threshold Voltage Vgs Typ4VRohs CompliantYes
Lead Free Status / RoHS StatusLead free / RoHS CompliantOther names497-10024-2
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Features
Type
V
DSS
STB50N25M5
250 V
Amongst the best R
* area
DS(on)
High dv/dt capability
Excellent switching performance
Easy to drive
100% avalanche tested
Application
Switching applications
Description
MDmesh™ V is a revolutionary Power MOSFET
technology, that combines an innovative
proprietary vertical process with
STMicroelectronics’s well known PowerMESH™
horizontal layout structure. The resulting product
has an extremely low on-resistance, making it
especially suitable for applications which require
superior power density and outstanding efficiency.
Table 1.
Device summary
Order code
STB50N25M5
June 2009
N-channel 250 V, 0.055 Ω, 28 A, D
MDmesh™ V Power MOSFET
R
DS(on)
I
D
max
< 0.065 Ω
28 A
Figure 1.
Marking
50N25M5
Doc ID 15923 Rev 1
STB50N25M5
3
1
D²PAK
Internal schematic diagram
Package
Packaging
D²PAK
Tape and reel
2
PAK
1/13
www.st.com
13

STB50N25M5 Summary of contents

  • Page 1

    ... Table 1. Device summary Order code STB50N25M5 June 2009 N-channel 250 V, 0.055 Ω MDmesh™ V Power MOSFET R DS(on max < 0.065 Ω Figure 1. Marking 50N25M5 Doc ID 15923 Rev 1 STB50N25M5 3 1 D²PAK Internal schematic diagram Package Packaging D²PAK Tape and reel 2 PAK 1/13 www.st.com 13 ...

  • Page 2

    ... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/ Doc ID 15923 Rev 1 STB50N25M5 . . . . . . . . . . . . . . . . . . . . . . . . . 6 ...

  • Page 3

    ... STB50N25M5 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Gate- source voltage GS I Drain current (continuous Drain current (continuous (1) I Drain current (pulsed Total dissipation at T TOT Avalanche current, repetitive or not-repetitive I AR (pulse width limited by T Single pulse avalanche energy E AS (starting T ...

  • Page 4

    ... Figure 15) Doc ID 15923 Rev 1 Min. Typ 250 =125 ° 100 µ 0.055 Min. Typ. 1700 - 100 171 - 1 while V is rising from 0 oss DS while V is rising from 0 oss DS STB50N25M5 Max. Unit V 1 µA 100 µA 100 Ω 0.065 Max. Unit Ω ...

  • Page 5

    ... STB50N25M5 Table 6. Switching times Symbol t Turn-on delay time d(on) t Rise time r t Turn-off-delay time d(off) t Fall time f Table 7. Source drain diode Symbol I Source-drain current SD (1) I Source-drain current (pulsed) SDM (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge rr I Reverse recovery current ...

  • Page 6

    ... Figure 3. AM03968v1 10µs 100µs 1ms 10ms V (V) 100 DS Figure 5. AM03969v1 temperature Figure 7. AM03977v1 R DS(on) (Ω) 0.07 0.06 0.05 0.04 0. (°C) 100 J Doc ID 15923 Rev 1 STB50N25M5 Thermal impedance Transfer characteristics V =20V Static drain-source on-resistance V =10V AM03970v1 V (V) GS AM03972v1 I (A) D ...

  • Page 7

    ... STB50N25M5 Figure 8. Output capacitance stored energy E oss (µJ) 2.5 2.0 1.5 1.0 0.5 0 100 150 0 50 Figure 10. Gate charge vs gate-source voltage Figure 11. Normalized on-resistance (V) V =200V =28A Figure 12. Normalized gate threshold voltage vs temperature V GS(th) (norm) I =100µA D 1.10 1.00 0.90 0.80 ...

  • Page 8

    ... AM01468v1 Figure 17. Unclamped inductive load test 3.3 1000 µF µ AM01470v1 Figure 19. Switching time waveform V (BR)DSS 10% 0 AM01472v1 Doc ID 15923 Rev 1 STB50N25M5 12V 47kΩ 100nF I =CONST G 100Ω GMAX 2200 µF 2.7kΩ 47kΩ 1kΩ circuit 2200 3.3 µ ...

  • Page 9

    ... STB50N25M5 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK trademark. Doc ID 15923 Rev 1 Package mechanical data ® 9/13 ...

  • Page 10

    ... Package mechanical data Dim 10/13 D2PAK (TO-263) mechanical data m m Min Typ Max ° 0 ° 8 0079457_M Doc ID 15923 Rev 1 STB50N25M5 Min Typ Max ° 0 ° 8 ...

  • Page 11

    ... STB50N25M5 5 Packaging mechanical data 2 D PAK FOOTPRINT TAPE MECHANICAL DATA mm DIM. MIN. MAX. A0 10.5 10.7 B0 15.7 15.9 D 1.5 1.6 D1 1.59 1.61 E 1.65 1.85 F 11.4 11.6 K0 4.8 5.0 P0 3.9 4.1 P1 11.9 12.1 P2 1.9 2 0.25 0.35 0.0098 0.0137 W 23.7 24.3 TAPE AND REEL SHIPMENT inch MIN ...

  • Page 12

    ... Revision history 6 Revision history Table 8. Document revision history Date 23-Jun-2009 12/13 Revision 1 First release Doc ID 15923 Rev 1 STB50N25M5 Changes ...

  • Page 13

    ... STB50N25M5 Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...