STB50N25M5 STMicroelectronics, STB50N25M5 Datasheet - Page 3

• Manufacturer Part Number: STB50N25M5
• Description: MOSFET N-CH 250V 28A D2PAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STB50N25M5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 65 mOhm @ 14A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 28A
• Vgs(th) (max) @ Id: 5V @ 100µA
• Gate Charge (qg) @ Vgs: 44nC @ 10V
• Input Capacitance (ciss) @ Vds: 1700pF @ 50V
• Power - Max: 110W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 14A
• Drain Source Voltage Vds: 250V
• On Resistance Rds(on): 55mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10024-2

STB50N25M5
1
Electrical ratings
Table 2.
1. Pulse width limited by safe operating area
2. I
Table 3.
Symbol
Symbol
R
dv/dt
R
I
P
DM
thj-case
V
E
T
thj-pcb
I
SD
T
T
I
I
TOT
AR
GS
stg
AS
D
D
J
J
(1)
(2)
≤ 28 A, di/dt ≤ 400 A/µs, V
Gate- source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Avalanche current, repetitive or not-repetitive
(pulse width limited by T
Single pulse avalanche energy
(starting T
Peak diode recovery voltage slope
Operating junction temperature
Storage temperature
Thermal resistance junction-case max
Thermal resistance junction-pcb max
Maximum lead temperature for soldering purpose
Absolute maximum ratings
Thermal data
J
= 25 °C, I
Parameter
Parameter
C
D
Doc ID 15923 Rev 1
Peak
= 25 °C
= I
J
max)
AR
< V
, V
(BR)DSS
C
C
DD
= 25 °C
= 100 °C
= 50 V)
-55 to 150
Value
Value
0.31
112
110
350
300
15
25
28
18
30
9
Electrical ratings
°C/W
°C/W
°C/W
V/ns
Unit
Unit
mJ
°C
W
V
A
A
A
A
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