STB50N25M5 STMicroelectronics, STB50N25M5 Datasheet - Page 4

• Manufacturer Part Number: STB50N25M5
• Description: MOSFET N-CH 250V 28A D2PAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STB50N25M5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 65 mOhm @ 14A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 28A
• Vgs(th) (max) @ Id: 5V @ 100µA
• Gate Charge (qg) @ Vgs: 44nC @ 10V
• Input Capacitance (ciss) @ Vds: 1700pF @ 50V
• Power - Max: 110W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 14A
• Drain Source Voltage Vds: 250V
• On Resistance Rds(on): 55mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10024-2

Electrical characteristics
2
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Electrical characteristics
(Tcase =25°C unless otherwise specified)
Table 4.
Table 5.
1. C
2. C
V
Symbol
Symbol
C
R
C
V
(BR)DSS
to 80% V
to 80% V
C
o(er)
I
I
C
DS(on)
C
o(tr)
Q
GS(th)
Q
GSS
DSS
Q
R
o(er)
o(tr)
oss
iss
rss
gs
gd
g
g
(2)
(1)
is a constant capacitance value that gives the same charging time as C
is a constant capacitance value that gives the same stored energy as C
DSS
DSS
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance energy
related
Equivalent output
capacitance time
related
Gate input resistance
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
Gate-body leakage
current (V
Gate threshold voltage V
Static drain-source on-
resistance
On /off states
Dynamic
Parameter
Parameter
DS
= 0)
GS
= 0)
Doc ID 15923 Rev 1
V
V
V
V
V
V
f=1 MHz open drain
V
V
(see Figure 15)
I
V
V
V
V
D
DS
GS
GS
(BR)DSS
GS
(BR)DSS
DD
GS
DS
DS
GS
DS
GS
= 1 mA, V
= Max rating
= Max rating, T
= 50 V, f = 1 MHz,
= 0
= 0, V
= 0, V
= 10 V
= ± 25 V
= V
= 10 V, I
= 200 V, I
Test conditions
Test conditions
GS
DS
DS
, I
GS
D
D
= 0 to 80%
= 0 to 80%
D
= 100 µA
= 14 A
= 0
= 28 A,
C
=125 °C
Min.
Min.
oss
250
oss
3
-
-
-
-
-
while V
while V
0.055
1700
Typ.
Typ.
100
171
1.8
15
89
44
10
23
DS
DS
4
is rising from 0
is rising from 0
STB50N25M5
0.065
Max.
Max.
100
100
1
5
-
-
-
-
-
Unit
Unit
nC
nC
nC
µA
µA
nA
pF
pF
pF
pF
pF
Ω
Ω
V
V