STB50N25M5 STMicroelectronics, STB50N25M5 Datasheet - Page 7

• Manufacturer Part Number: STB50N25M5
• Description: MOSFET N-CH 250V 28A D2PAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STB50N25M5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 65 mOhm @ 14A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 28A
• Vgs(th) (max) @ Id: 5V @ 100µA
• Gate Charge (qg) @ Vgs: 44nC @ 10V
• Input Capacitance (ciss) @ Vds: 1700pF @ 50V
• Power - Max: 110W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 14A
• Drain Source Voltage Vds: 250V
• On Resistance Rds(on): 55mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10024-2

STB50N25M5
Figure 8.
Figure 10. Gate charge vs gate-source voltage Figure 11. Normalized on-resistance vs
Figure 12.
(norm)
V
GS(th)
1.00
0.80
0.70
1.10
E
V
0.90
(µJ)
(V)
0.5
12
2.0
1.5
10
oss
2.5
1.0
GS
6
4
2
8
0
-50
0
0
0
V
Output capacitance stored energy
vs temperature
DS
-25
Normalized gate threshold voltage
10
50
0
20
100
V
25
DD
I
D
=200V
I
=28A
D
30
150
50
=100µA
75
200
40
100
50
250
V
T
GS
J
Q
(°C)
Doc ID 15923 Rev 1
g
(nC)
AM04951v1
AM03974v1
AM03975v1
V
DS
(V)
Figure 9.
Figure 13. Source-drain diode forward
(norm)
R
1000
DS(on)
100
(pF)
(V)
V
0.6
0.4
10
1.3
0.9
0.2
0.5
1.0
0.8
1.7
1.2
2.1
C
SD
1
0
-50
0.1
0
Capacitance variations
temperature
characteristics
T
-25
J
=150°C
10
T
1
0
J
=-50°C
20
V
I
GS
25
D
=14A
Electrical characteristics
=10V
10
50
30
75
40
100
100
T
J
=25°C
50
T
V
J
DS
(°C)
I
AM03976v1
AM03978v1
SD
AM03973v1
(V)
Ciss
Crss
(A)
Coss
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