IXTH26P20P IXYS, IXTH26P20P Datasheet
Home Discrete Semiconductor Products MOSFETs, GaNFETs - Single IXTH26P20P
Manufacturer Part Number
IXTH26P20P
Description
MOSFET P-CH 200V 26A TO-247
Specifications of IXTH26P20P
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
170 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
26A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
56nC @ 10V
Input Capacitance (ciss) @ Vds
2740pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-247
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.17 Ohms
Drain-source Breakdown Voltage
- 200 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
26 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
-200
Id(cont), Tc=25°c, (a)
-26
Rds(on), Max, Tj=25°c, (?)
0.17
Ciss, Typ, (pf)
2740
Qg, Typ, (nc)
56
Trr, Typ, (ns)
240
Pd, (w)
300
Rthjc, Max, (k/w)
0.42
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
PolarP
Power MOSFET
P-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
V
I
I
I
E
E
dV/dt
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
© 2007 IXYS CORPORATION, All rights reserved
D25
DM
AR
GSS
DSS
J
JM
stg
L
SOLD
DSS
DGR
GSS
GSM
AR
AS
D
GS(th)
DS(on)
d
J
DSS
= 25°C, unless otherwise specified)
TO-263 (IXTA)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
1.6mm (0.062 in.) from case for 10s
Plastic body for 10s
Mounting torque
TO-247
TO-3P
TO-220
TO-263
V
V
V
V
V
V
Test Conditions
G
S
TM
J
J
C
C
C
C
C
C
GS
DS
GS
DS
GS
GS
= 25°C to 175°C
= 25°C to 175°C, R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
≤ I
= 25°C
= 0V, I
= V
= ±20V, V
= V
= 0V
= -10V, I
S
DM
GS
, V
DSS
, I
DD
D
D
= -250 μA
D(TAB)
D
≤ V
= -250μA
DS
= 0.5 • I
DSS
= 0V
, T
(TO-3P,TO-220,TO-247)
J
D25
GS
≤ 175°C
, Note 1
= 1MΩ
Preliminary Technical Information
TO-247 (IXTH)
IXTA26P20P
IXTH26P20P
IXTP26P20P
IXTQ26P20P
T
J
JM
= 150°C
G
D
S
-55 ... +175
-55 ... +175
- 200
- 2.5
Maximum Ratings
Characteristic Values
Min.
1.13/10
- 200
- 200
- 26
- 70
- 26
±20
±30
300
175
300
260
1.5
6.0
5.5
3.0
2.5
50
10
Typ.
D(TAB)
- 250 μA
±100 nA
- 4.5
Nm/lb.in.
- 10 μA
170 mΩ
Max.
V/ns
mJ
°C
°C
°C
°C
°C
W
V
V
V
V
V
A
A
A
V
g
g
g
g
J
TO-220 (IXTP)
TO-3P (IXTQ)
V
I
R
Features:
Applications:
Advantages:
D25
International standard packages
Fast intrinsic diode
Dynamic dV/dt Rated
Avalanche Rated
Rugged PolarP
Low Q
Low Drain-to-Tab capacitance
Low package inductance
- easy to drive and to protect
Hight side switching
Push-pull amplifiers
DC Choppers
Current regulators
Automatic test equipment
Low gate charge results in simple
drive requirement
Improved Gate, Avalanche and
dynamic dV/dt ruggedness
High power density
Fast switching
DS(on)
DSS
G
G = Gate
S = Source
G
D
G
S
D
and R
≤ ≤ ≤ ≤ ≤
=
=
S
ds(on)
TM
- 200V
- 26A
process
characterization
170mΩ Ω Ω Ω Ω
D(TAB)
D = Drain
TAB = Drain
DS99913(10/07)
D(TAB)
Related parts for IXTH26P20P
IXTH26P20P Summary of contents
... ±20V GSS DSS DS DSS -10V 0.5 • I DS(on © 2007 IXYS CORPORATION, All rights reserved Preliminary Technical Information IXTA26P20P IXTH26P20P IXTP26P20P IXTQ26P20P TO-247 (IXTH Maximum Ratings - 200 = 1MΩ - 200 GS ±20 ± 1.5 ≤ 175° 300 -55 ... +175 175 -55 ... +175 300 260 1 ...
... The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. ...
... TO-263 (IXTA) Outline TO-220 (IXTP) Outline Pins Gate © 2007 IXYS CORPORATION, All rights reserved TO-247 (IXTH) Outline TO-3P (IXTQ) Outline 2 - Drain IXTA26P20P IXTP26P20P IXTP26P20P IXTQ26P20P ∅ Terminals Gate 2 - Drain Dim. Millimeter Inches Min. Max. Min. Max. A 4.7 5.3 .185 .209 A 2 ...
... I - Amperes D IXYS reserves the right to change limits, test conditions, and dimensions. - -10V GS -80 -8V -70 -7V -60 -50 -6V -40 -30 -20 -5V -10 -2.5 -3.0 -3.5 -4.0 -4.5 2.8 ...
... Fig. 9. Forward Voltage Drop of Intrinsic Diode -80 -70 -60 -50 - 150ºC J -30 -20 -10 0 -0 Volts SD Fig. 11. Capacitance 10,000 MHz 1,000 100 -10 -15 - Volts DS © 2007 IXYS CORPORATION, All rights reserved 40ºC J 25ºC 24 150º -5.5 -6 -6 25º -2 100 ...
... IXYS reserves the right to change limits, test conditions, and dimensions. Fig. 13. Maximum Transient Thermal Impedance 0.01 Pulse Width - Seconds IXTA26P20P IXTP26P20P IXTP26P20P IXTQ26P20P 0.1 1 IXYS REF: T_26P20P(B5)10-10-07 10 ...
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